An in-depth understanding of the formation of silicon dioxide (SiO₂) on silicon carbide (SiC) in thermal oxidation is imperative for micro/nano fabrication processes, integration of electronic components, and evaluation of SiC device performance under extreme conditions. Herein, we report a comprehensive study on the effects of crystalline orientations, thicknesses, and growth temperatures of cubic SiC films on their wet oxidation properties. The oxidation rate and surface morphology were characterized using atomic force microscopy (AFM) and light reflectance measurement systems. Our experimental results revealed the role of defects in the SiC crystal on the oxidation that relates to SiC thickness, deposition conditions, crystal orientation and temperature of wet oxidation. Critically, the electrical properties of SiC films oxidized at 900 °C remained the same as the unoxidized film as confirmed by room-temperature current-voltage measurements, indicating a long-term service temperature of SiC. These findings are expected to provide crucial information on the effects of defects on the formation of SiO₂ on SiC films at different oxidation temperatures, which is highly essential for establishing a basic platform for the fabrication of high-performance SiC-based electronic devices.

对二氧化硅（SiO ₂）在碳化硅（SiC）上进行热氧化对于微/纳米制造工艺，电子元件集成以及在极端条件下评估SiC器件性能至关重要。在本文中，我们报告了关于立方晶SiC膜的晶体取向，厚度和生长温度对其湿式氧化性能的影响的综合研究。使用原子力显微镜（AFM）和光反射率测量系统对氧化速率和表面形态进行了表征。我们的实验结果表明，SiC晶体中的缺陷对氧化的作用与SiC的厚度，沉积条件，晶体取向和湿法氧化的温度有关。至关重要的是 通过室温电流-电压测量证实，在900°C氧化的SiC薄膜的电性能与未氧化的薄膜相同，这表明SiC的长期使用温度。这些发现有望提供有关缺陷对SiO形成的影响的重要信息。₂在不同氧化温度下的SiC膜上，这对于建立高性能SiC基电子器件制造基础平台至关重要。