Al/p-Si (MS) type SBDs with/without (PVP–TeO₂: Cd) interfacial layer was fabricated in the same conditions to investigate Cd impurities on its electrophysical parameters using I–V and Z-f measurements. Structural and optical properties of the (TeO₂: Cd) nanostructures were characterized using XRD, FE-SEM, EDX, and UV–Vis techniques. The existence of Cd impurities and formation of TeO₂ nanostructures was confirmed by EDX and XRD techniques, respectively. The values of barrier height (Φ_B0), ideality factor (n), series resistance (R_s) were derived from the I_F-V_F data as 0.65 eV, 5.60, 4.80 kΩ for MS and 0.54 eV, 4.83, 0.27 kΩ for MPS SBD, respectively. The energy-dependent profile of surface states (N_ss) was also extracted from I_F-V_F data by assuming voltage-dependent of BH and n. The existence of impurities in the interlayer leads to a decrease of n, R_s, Φ_B0, but an increase of leakage current, rectifying ratio (I_F/I_R), and conductivity.

在相同条件下制造具有/不具有（PVP-TeO ₂：Cd）界面层的Al / p-Si（MS）型SBD，以使用IV和Zf测量研究Cd杂质的电物理参数。（TeO ₂：Cd）纳米结构的结构和光学性质使用XRD，FE-SEM，EDX和UV-Vis技术进行了表征。通过EDX和XRD技术分别证实了Cd杂质的存在和TeO ₂纳米结构的形成。势垒高度（Φ的值_乙0），理想因子（n）时，串联电阻（R_小号）中从I衍生_˚F -V _˚FMS的数据分别为0.65 eV，5.60、4.80kΩ，MPS SBD的数据分别为0.54 eV，4.83、0.27kΩ。通过假设BH和n与电压有关，还从I _F -V _F数据中提取了表面状态（N _ss）与能量有关的轮廓。的在层间引线的杂质的存在至n，R的减少_小号，Φ_乙0，但增加了泄漏电流，整流比（I _˚F / I _{- [R} ），和导电性。