This research work has been demonstrated the growth of ZnInO thin films using thermal evaporation technique for thermoelectric power generation applications. The pure zinc powder and indium metal were evaporated on the multi-crystalline Si substrate using the vacuum tube furnace. Deposited thin films were annealed at various temperatures (500–700 °C) for 30 min in a programmable muffle furnace. XRD data concluded that the sample annealed at temperature 500 °C^, has a weak structure of ZnO. But as we have increased the annealing temperature, indium atoms get thermal energy from the annealing process and reacted with ZnO molecule to form ZnInO composite. The vibrational and rotational modes of the samples were studied by the Raman spectroscopic analysis and morphology of annealed samples was verified by SEM. The Seebeck coefficient data suggested that the value of Seebeck coefficient varies between (140.9–182.2) μV/^oC. The maximum value of the Seebeck coefficient was obtained for the sample annealed at 600 °C because the mobility of carriers is highest at that temperature. But the value of electrical conductivity and power factor for the sample annealed at 600 °C is minimum due to low carrier concentration. Because of these conclusions, it may be suggested that this material can be a potential choice soon for thermoelectric power generation applications.

这项研究工作已经证明了使用热蒸发技术在热电发电应用中ZnInO薄膜的生长。使用真空管式炉将纯锌粉和铟金属蒸发到多晶硅衬底上。沉积的薄膜在可编程马弗炉中在各种温度（500–700°C）下退火30分钟。XRD数据得出结论，样品在500°C的温度下退火^，具有弱的ZnO结构。但是随着退火温度的升高，铟原子从退火过程中获取热能，并与ZnO分子反应形成ZnInO复合材料。通过拉曼光谱分析研究了样品的振动和旋转模式，并通过SEM验证了退火样品的形态。Seebeck系数数据表明，Seebeck系数的值在（140.9–182.2）μV/ ^o之间变化由于在该温度下载流子的迁移率最高，因此获得了在600°C退火的样品的塞贝克系数的最大值。但是由于载流子浓度低，在600°C下退火的样品的电导率和功率因数值最小。基于这些结论，可能暗示这种材料可以很快成为热电发电应用的潜在选择。