In this work, a simple cost-effective physical vapor deposition method for obtaining high-quality Bi₂Se₃ and Sb₂Te₃ ultrathin films with thicknesses down to 5 nm on mica, fused quartz, and monolayer graphene substrates is reported. Physical vapor deposition of continuous Sb₂Te₃ ultrathin films with thicknesses 10 nm and below is demonstrated for the first time. Studies of thermoelectrical properties of synthesized Bi₂Se₃ ultrathin films deposited on mica indicated opening of a hybridization gap in Bi₂Se₃ ultrathin films with thicknesses below 6 nm. Both Bi₂Se₃ and Sb₂Te₃ ultrathin films showed the Seebeck coefficient and thermoelectrical power factors comparable with the parameters obtained for the high-quality thin films grown by the molecular beam epitaxy method. Performance of the best Bi₂Se₃ and Sb₂Te₃ ultrathin films is tested in the two-leg prototype of a thermoelectric generator.

在这项工作中，报告了一种简单的经济高效的物理气相沉积方法，用于在云母，熔融石英和单层石墨烯衬底上获得厚度低至5 nm的高质量Bi ₂ Se ₃和Sb ₂ Te ₃超薄膜。首次展示了厚度为10 nm以下的连续Sb ₂ Te ₃超薄膜的物理气相沉积。对沉积在云母上的合成Bi ₂ Se ₃超薄膜的热电性能的研究表明，Bi ₂ Se ₃超薄膜的厚度低于6 nm时，出现了杂交间隙。双双₂Se ₃和Sb ₂ Te ₃超薄膜的塞贝克系数和热电功率因数与分子束外延法生长的高质量薄膜的参数相当。最好的Bi ₂ Se ₃和Sb ₂ Te ₃超薄膜的性能在热电发电机的两腿原型中进行了测试。