Abstract In this manuscript, we have reported the thermo-electric (TE) properties of Cu2Zn1-xCdxSnS4 thin films grown by a sol - gel method. Various thermoelectric properties such as Seebeck coefficient, electrical conductivity and power factor of host CZTS were found to be increased (536 μV/°C, 227 S/cm and 6.3 × 10−3 Wm−1C−2 respectively) with Cd incorporation. The enhancement in the thermo-electric properties is due to the fact that the density of electrons is shifted towards the Cu atoms which is responsible for the development of copper-based secondary phases. The development of secondary phases with Cd atoms resulted in the enhancement of Seebeck coefficient and electrical conductivity simultaneously. This argument was justified by some supplementary measurements such as XRD, Raman Spectroscopy and Scanning Electron Microscopy. XRD and Raman data suggested the development of secondary phases with the concentration of Cd atoms in the crystal of CZTS. SEM images demonstrated the irregular formation of grain structure with nano and microscale sizes.

中文翻译：

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掺入Cd原子改善溶胶凝胶生长的Cu2Zn1-xSnS4薄膜的热电性能

摘要 在本手稿中，我们报道了通过溶胶-凝胶法生长的 Cu2Zn1-xCdxSnS4 薄膜的热电 (TE) 特性。发现主体 CZTS 的各种热电性能，如塞贝克系数、电导率和功率因数随着 Cd 的掺入而增加（分别为 536 μV/°C、227 S/cm 和 6.3 × 10-3 Wm-1C-2）。热电性能的增强是由于电子密度向铜原子转移的事实，这导致铜基二次相的发展。具有 Cd 原子的第二相的发展导致塞贝克系数和电导率同时提高。这一论点得到了一些补充测量的证明，例如 XRD、拉曼光谱和扫描电子显微镜。XRD 和拉曼数据表明，随着 CZTS 晶体中 Cd 原子浓度的增加，二次相的发展。SEM 图像显示了纳米和微米尺寸的晶粒结构的不规则形成。