Abstract Owing to its compatibility with existing Si technology, epitaxial graphene on SiC is expected to replace III-V materials in future. This paper proposes an available approach to overcome the low quality and the high cost properties of traditional epitaxial growth access. The epitaxial graphene grows in low vacuum environment, using Ar as the filling gas. The epitaxial graphene was investigated with optical microscope, atomic force microscopy and Raman spectroscopy. It is found that large area graphene cover on SiC C-face conformally. The Raman results show that the materials obtained in lower vacuum environment are ordered and put free standing monolayer graphene.

中文翻译：

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中等真空技术在SiC(000-1)上制备大面积石墨烯

摘要 由于与现有硅技术的兼容性，SiC 上的外延石墨烯有望在未来取代 III-V 族材料。本文提出了一种可用的方法来克服传统外延生长通路的低质量和高成本特性。外延石墨烯在低真空环境中生长，使用 Ar 作为填充气体。用光学显微镜、原子力显微镜和拉曼光谱研究外延石墨烯。发现大面积石墨烯共形地覆盖在 SiC C 面上。拉曼结果表明，在较低真空环境中获得的材料是有序的，并放置了独立的单层石墨烯。