Effect of crucible rotation on the temperature and oxygen distributions in Czochralski grown silicon for photovoltaic applications,CrystEngComm

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Effect of crucible rotation on the temperature and oxygen distributions in Czochralski grown silicon for photovoltaic applications
CrystEngComm ( IF 2.6 ) Pub Date : 2020-11-20 , DOI: 10.1039/d0ce01377c
Alexandra Popescu _{1,

2,

3,

4} , Martin P. Bellmann _{5,

6,

7} , Daniel Vizman _{1,

2,

3,

4}

Affiliation

Temperature and oxygen distributions were numerically studied for the Czochralski (Cz) growth of 8′′ diameter silicon single crystals for photovoltaic applications. Fluctuations in the dopant concentration (striation pattern) in the grown crystal obtained by lateral photovoltage scanning (LPS) technique seems to be better correlated with simulated temperature fluctuations near the solid–liquid interface than with oxygen concentration oscillations. From the transient simulations of different crucible rotation rates, 2, 4, 6 and 8 rpm, it is indicated that the average oxygen melt concentration first decreases with increasing rotation rate and later increases. This suggests that a critical rotation rate exists where the oxygen concentration below the solid–liquid interface increases with increasing rotation rate. When comparing the temperature and oxygen distributions in the melt it was found that oxygen is more sensitive to changes in the rotation rate than the temperature.

中文翻译：

坩埚旋转对切克劳斯基生长的光伏应用硅中温度和氧分布的影响

数值研究了用于光伏应用的直径为8''的硅单晶Czochralski（Cz）生长的温度和氧分布。通过横向光电压扫描（LPS）技术获得的生长晶体中的掺杂物浓度（条纹图案）波动似乎与固液界面附近的模拟温度波动更好地相关，而不是与氧浓度振荡相关。从不同的坩埚旋转速度（2、4、6、8和8 rpm）的瞬态模拟可以看出，平均氧熔体浓度首先随着旋转速度的增加而降低，然后又增加。这表明存在临界转速，固液界面下的氧气浓度随转速的增加而增加。

更新日期：2020-11-25

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