Single-crystalline aluminum (Al) films are grown on GaAs (100) substrates by molecular beam epitaxy. The Al/GaAs interface is modified by ErAs insertion, and the Al quality is further improved. The full-width at half-maximum for Al (111) diffraction peak is 0.06°, and the root-mean-square surface roughness is 0.69 nm. In addition, the Al growth orientation can be tuned by ErAs insertion, which is attributed to the smaller lattice mismatch and higher surface symmetry provided by ErAs. The interfacial interdiffusion between Al and GaAs can be suppressed by ErAs as well. The sharp interfaces as well as the high quality of Al are confirmed by cross-sectional transmission electron microscopy studies. The lattice arrangements of the two stable Al/GaAs and Al/ErAs structures are proposed to show that the lattice matching and the interfacial bonding are two main driving forces.

中文翻译：

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通过ErAs插入在GaAs上生长的单晶铝膜上的界面调制

通过分子束外延在GaAs（100）衬底上生长单晶铝（Al）膜。通过插入ErAs可以修改Al / GaAs界面，并进一步提高Al的质量。Al（111）衍射峰的半峰全宽为0.06°，均方根表面粗糙度为0.69 nm。另外，可以通过ErAs插入来调节Al的生长取向，这归因于ErAs提供的较小的晶格失配和较高的表面对称性。Al和GaAs之间的界面相互扩散也可以通过ErAs来抑制。截面透射电子显微镜研究证实了铝的尖锐界面以及高质量。