As one of the most attractive transition metal dichalcogenides (TMDs), the growth of molybdenum disulfide (MoS₂) with industrial compatibility is of great importance. Atomic layer deposition (ALD) has been shown to be a promising method to achieve the growth of high-quality TMD materials. However, MoS₂ films deposited by ALD often are amorphous with nonideal stoichiometry and require high-temperature post-deposition annealing. In this study, we introduce a modified ALD recipe using Mo(CO)₆ and H₂S, resulting in controllable linear growth behavior, a S-to-Mo ratio of 2:1, and crystalline films at a temperature as low as 190 °C. The growth mechanisms and key factors leading to this improvement are proposed and complemented by kinetics calculations. This newly developed methodology relies on aligning the process time with the reaction kinetics of carbonyl disassociation. The MoS₂ films prepared herein were shown to be active hydrogen evolution reaction catalysts.

中文翻译：

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MoS2薄膜的改良原子层沉积

作为最具吸引力的过渡金属二硫化二氢（TMD）之一，具有工业相容性的二硫化钼（MoS ₂）的生长非常重要。原子层沉积（ALD）已被证明是实现高质量TMD材料生长的一种有前途的方法。然而，通过ALD沉积的MoS ₂膜通常具有非理想化学计量的非晶态，并且需要高温后沉积退火。在这项研究中，我们介绍了使用Mo（CO）₆和H ₂的改良ALD配方S，导致可控制的线性生长行为，S与Mo的比例为2：1，并在低至190°C的温度下形成结晶膜。提出了导致这种改善的生长机理和关键因素，并通过动力学计算进行了补充。这种新开发的方法依赖于使处理时间与羰基解离的反应动力学保持一致。已显示本文制备的MoS ₂膜是活性氢释放反应催化剂。