Room temperature evaporation of titanium isopropoxide [Ti[OCH(CH₃)₂]₄, TTIP] precursor was performed using ultrasonic atomization for TiO₂ atomic layer deposition (ALD). Quartz crystal microbalance data show comparable results between room temperature TTIP ultrasonic atomization and conventional thermal evaporation. The TiO₂ ALD saturation window is established for room temperature atomized TTIP exposure time and reactor temperatures. Room temperature atomized TTIP grown TiO₂ films show smooth surface morphology before/after the annealing treatment. Two-dimensional TiO₂ film thickness mappings on a 150 mm diameter Si(100) wafer were performed by spectroscopic ellipsometry. The thickness variation of TiO₂ films by the room temperature atomized TTIP is less uniform than that of TiO₂ films by thermally evaporated TTIP, probably due to the incomplete evaporation of the TTIP liquid droplets, which is more difficult to transport than its vapor.

中文翻译：

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室温超声雾化异丙醇钛用于TiO2原子层沉积

使用超声雾化进行TiO ₂原子层沉积（ALD），进行异丙醇钛[Ti [OCH（CH ₃）₂ ] ₄，TTIP]前体的室温蒸发。石英晶体微量天平数据显示了室温TTIP超声雾化和常规热蒸发之间的可比结果。为室温雾化的TTIP暴露时间和反应器温度建立TiO ₂ ALD饱和窗口。室温雾化的TTIP生长的TiO ₂薄膜在退火处理之前/之后显示出光滑的表面形态。二维TiO ₂在150毫米直径的Si（100）晶片上的膜厚映射是通过光谱椭圆偏振法进行的。TiO 2的厚度变化_2层由室温雾化TTIP膜比的TiO均匀少_2层膜通过热蒸发TTIP，可能是由于TTIP液滴的不完全蒸发，这是为了传输比其蒸气更加困难。