The initial growth of silicon nitride (SiN) thin films was studied during thermal atomic layer deposition (ALD) using silicon tetraiodide (SiI₄) and ammonia (NH₃) onto various oxide underlayers (native SiO₂, sapphire, ALD Al₂O₃, and ALD ZrO₂) at two deposition temperatures (200 and 350 °C). We found that the SiI₄/NH₃ process shows earlier nucleation on high-k oxide underlayers (sapphire, ALD Al₂O₃, and ALD ZrO₂) compared with SiO₂ at 200 °C. Interestingly, an NH₃-plasma treatment reverses the selectivity between high-k oxides and SiO₂: SiN growth has no nucleation delay on NH₃-plasma-treated SiO₂ but is severely delayed on NH₃-plasma-treated high-k oxides at both temperatures (an incubation period of at least 300 cycles at 200 °C and 50 cycles at 350 °C).

中文翻译：

---

使用SiI4和NH3的SiN的选择性ALD：温度，等离子体处理和氧化物底层的影响

使用四碘化硅（SiI ₄）和氨气（NH ₃）在各种氧化物下层（天然SiO ₂，蓝宝石，ALD Al ₂ O ₃）上进行热原子层沉积（ALD）期间研究了氮化硅（SiN）薄膜的初始生长和ALD ZrO ₂）在两个沉积温度（200和350°C）下进行。我们发现，在200°C时，与SiO ₂相比，SiI ₄ / NH ₃工艺在高k氧化物下层（蓝宝石，ALD Al ₂ O ₃和ALD ZrO ₂）上显示出更早的成核作用。有趣的是，NH ₃等离子体处理会逆转高k氧化物与SiO ₂之间的选择性：SiN的生长在NH _3-等离子体处理的SiO ₂上没有成核延迟，但在两种温度下均严重延迟了NH _3-等离子体处理的高k氧化物（在200°C时至少300个循环的孵育时间，在350°C时至少50个循环的孵育时间）。