Nanorod arrays have become an attractive alternative to their thin film and bulk counterparts in photovoltaic and photoconductivity research. This is mainly attributed to their superior optical and electrical properties. Light trapping and unique bandgap geometries in vertically aligned nanostructures result in high optical absorption and provide enhanced carrier collection by utilizing a fully depleted p-n junction between the anode and cathode via an isolated “capping” construction. The combination of these two features leads to the development of high efficiency nanostructured devices that can be utilized in solar cells and photodetectors. Optical absorption properties, geometry, and opto-electrical properties of nanorod arrays of CuIn_xGa_(1−x)Se₂ (CIGS), a p-type semiconductor with a wide bandgap ranging from 1.0 to 1.7 eV, are compared to their thin film counterparts. Utilizing a radio frequency sputtering system, a quaternary target, and glancing angle deposition technique, both isolated vertical arrays of CIGS nanorods and “core-shell” devices were fabricated, while conventional film devices were fabricated by normal incidence deposition. Scanning electron microscopy images indicated a successful growth of CIGS nanorods. Optical absorption and opto-electrical performance were found to be strongly improved by the presence of the isolated nanorod structures through spectroscopic reflectometry and responsivity testing under a solar simulator.

中文翻译：

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掠射角沉积技术对四元溅射铜铟镓硒纳米棒的光电表征

在光伏和光电导性研究中，纳米棒阵列已成为其薄膜和整体同类产品的有吸引力的替代品。这主要归因于其优异的光学和电学性能。垂直排列的纳米结构中的光捕获和独特的带隙几何结构导致高的光吸收，并通过隔离的“帽”结构利用阳极和阴极之间的完全耗尽的pn结，增强了载流子的收集。这两个特征的结合导致了可以在太阳能电池和光电探测器中使用的高效纳米结构器件的开发。CuIn _x Ga _（1-x） Se ₂的纳米棒阵列的光吸收特性，几何形状和光电特性（CIGS）是一种宽带隙介于1.0到1.7 eV的p型半导体，与薄膜同类产品进行了比较。利用射频溅射系统，四级靶和掠角沉积技术，制造了隔离的CIGS纳米棒垂直阵列和“核-壳”器件，而常规的薄膜器件则通过法向入射沉积制备。扫描电子显微镜图像显示CIGS纳米棒的成功生长。发现通过光谱反射法和在太阳模拟器下的响应度测试，通过隔离的纳米棒结构的存在，光吸收和光电性能得到了极大的改善。