CeO2–HfO2 solid solution thin films, Hf1−xCexO2, are fabricated on n+-Si(100) substrates by the chemical solution deposition method. The effects of the CeO2 content and annealing temperature on the structure and ferroelectric properties of Hf1−xCexO2 are studied. The structural properties are investigated by glancing incidence x-ray diffraction and high resolution transmission electron microscopy, while the chemical states are examined by x-ray photoelectron spectroscopy. The results reveal that the admixture of CeO2 could effectively induce the ferroelectric phase. For Hf0.85Ce0.15O2 fabricated at an annealing temperature of 800 °C, an enhanced remanent polarization (Pr) of ∼20 μC/cm2 (after correction for leakage and parasitics) could be attained. Moreover, Hf0.85Ce0.15O2 demonstrates good endurance behavior, that the polarization does not show obvious degradation over 1 × 109 bipolar switching cycles, at an electric field of 2.9 MV/cm and a frequency of 100 kHz. This work highlights the importance of CeO2–HfO2 solid solution films in HfO2-based ferroelectric thin films.

中文翻译：

---

通过化学溶液沉积改善 Si 衬底上 CeO2-HfO2 固溶体薄膜的剩余极化

CeO2–HfO2 固溶体薄膜 Hf1-xCexO2 是通过化学溶液沉积法在 n+-Si(100) 衬底上制造的。研究了 CeO2 含量和退火温度对 Hf1-xCexO2 结构和铁电性能的影响。通过扫描入射 x 射线衍射和高分辨率透射电子显微镜研究结构特性，而通过 x 射线光电子能谱检查化学状态。结果表明，CeO2 的混合物可以有效地诱导铁电相。对于在 800 °C 的退火温度下制造的 Hf0.85Ce0.15O2，可以获得约 20 μC/cm2 的增强剩余极化（Pr）（经过泄漏和寄生校正后）。此外，Hf0.85Ce0.15O2 表现出良好的耐久性行为，在 2.9 MV/cm 的电场和 100 kHz 的频率下，极化在 1 × 109 双极开关周期内没有表现出明显的退化。这项工作强调了 CeO2-HfO2 固溶体薄膜在 HfO2 基铁电薄膜中的重要性。