The reliability of Hf0.5Zr0.5O2 (HZO) metal–ferroelectric–semiconductor capacitors grown by plasma-assisted atomic oxygen deposition on Ge substrates is investigated with an emphasis on the influence of crystallization annealing. The capacitors show very weak wake-up and imprint effects, allowing reliable operation in excess of 10 years, which is attributed partly to the clean, oxide-free Ge/HZO bottom interface. The weak temperature dependence and the observed asymmetries between polarization up and down states and between positive and negative coercive voltage shifts lead to the conclusion that imprint is controlled by carrier injection at the top electrode interface. The latter mechanism is associated with trapping at interfacial oxygen-vacancy defects. On the other hand, using ultrafast (millisecond) flash annealing improves the leakage current by at least an order of magnitude and the endurance by a factor of 3 compared to conventional rapid thermal annealing, which makes them suitable for low power nonvolatile memory applications where (ultra)thin HZO is an essential requirement.

中文翻译：

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通过等离子体辅助原子氧沉积生长的铁电 TiN/Hf0.5Zr0.5O2/Ge 电容器的可靠性方面

研究了通过等离子体辅助原子氧沉积在 Ge 衬底上生长的 Hf0.5Zr0.5O2 (HZO) 金属-铁电-半导体电容器的可靠性，重点是结晶退火的影响。电容器显示出非常弱的唤醒和压印效应，允许可靠运行超过 10 年，这部分归功于干净、无氧化物的 Ge/HZO 底部界面。弱的温度依赖性和观察到的极化向上和向下状态之间以及正负矫顽电压偏移之间的不对称性导致压印受顶部电极界面处的载流子注入控制。后一种机制与界面氧空位缺陷处的俘获有关。另一方面，