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Nanometer-Thick Metastable Zinc Blende γ-MnTe Single-Crystalline Films for High-Performance Ultraviolet and Broadband Photodetectors
ACS Applied Nano Materials ( IF 5.3 ) Pub Date : 2020-11-25 , DOI: 10.1021/acsanm.0c02560 Qin Lian 1 , Lisa Zhou 1 , Jiyue Zhang 1 , Hongzhu Wu 1 , Wei Bai 1 , Jing Yang 1 , Yuanyuan Zhang 1 , Ruijuan Qi 1 , Rong Huang 1 , Xiaodong Tang 1, 2 , Jianlu Wang 3 , Junhao Chu 3
ACS Applied Nano Materials ( IF 5.3 ) Pub Date : 2020-11-25 , DOI: 10.1021/acsanm.0c02560 Qin Lian 1 , Lisa Zhou 1 , Jiyue Zhang 1 , Hongzhu Wu 1 , Wei Bai 1 , Jing Yang 1 , Yuanyuan Zhang 1 , Ruijuan Qi 1 , Rong Huang 1 , Xiaodong Tang 1, 2 , Jianlu Wang 3 , Junhao Chu 3
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Van der Waals heteroepitaxial (vdWE) has been intensely developed and considered as the most promising heteroepitaxial technique for growth of high-quality nanoscale films, covalent-bonded semiconductor films, and heterostructures to create the next-generation flexible electronic/optoelectronic devices because of its nature of relief of the strict requirement of lattice matching and its elegant exfoliation and transfer to any substrates of interest. However, application of the vdWE route in growing metastable and artificial materials and structures is still absent. In this work, by using the molecular beam epitaxy (MBE), epitaxy of metastable γ-phase nanometer-thick MnTe thin films is achieved on two-dimensional mica substrates through attentive control of its growth kinetics. The good crystallinity of vdWE γ-MnTe thin films is shown by a low half peak width value of about 0.19° for 50 nm-thick epitaxial films. Moreover, a structure with perfect lattice, a wide Egopt of ∼3.26 eV with the direct electron transition structure, a broad absorption region from ultraviolet (UV) to near-infrared (NIR), and an ultrahigh absorption coefficient beyond 106 cm–1 in the UV region are found in vdWE nanometer-thick γ-MnTe thin films. The photodetectors with vdWE γ-MnTe/mica systems exhibit a highly sensitive broadband detecting from the UV to the NIR region. The detectors show an outstanding UV response with a high responsivity of 526 A W–1 and specific detectivity of 2.46 × 1012 Jones and show fast photoresponse speeds (τrising = 1.9 ms and τdecay = 1.7 ms) under a 375 nm laser illumination that indicate a great potential in flexible UV and broad spectrum detection of the photodetectors with vdWE nanometer-thick γ-MnTe/mica.
中文翻译：
用于高性能紫外和宽带光电探测器的纳米级亚稳态锌共混物γ-MnTe单晶膜
Van der Waals异质外延（vdWE）已被广泛开发，并被认为是用于生长高质量纳米级薄膜，共价键合半导体薄膜和异质结构以创建下一代柔性电子/光电器件的最有前途的异质外延技术缓解了对晶格匹配的严格要求及其优雅的剥离和转移到任何感兴趣的基材的性质。但是，vdWE路线在亚稳和人造材料和结构的生长中仍然缺乏应用。在这项工作中，通过使用分子束外延（MBE），通过细心地控制其生长动力学，在二维云母衬底上实现了亚稳态γ相纳米厚MnTe薄膜的外延。对于50 nm厚的外延膜，vdWEγ-MnTe薄膜具有良好的结晶度，其低半峰宽约为0.19°。而且，具有完美晶格，宽阔的结构在vdWE中发现具有直接电子跃迁结构的E g opt约为3.26 eV，具有从紫外线（UV）到近红外（NIR）的宽吸收区，并且在UV区的超高吸收系数超过10 6 cm –1纳米厚的γ-MnTe薄膜。具有vdWEγ-MnTe/云母系统的光电探测器在从紫外线到近红外区域显示出高灵敏度的宽带检测。检测器显示出出色的紫外线响应，具有526 AW –1的高响应度和2.46×10 12 Jones的比检测率，并显示出快速的光响应速度（τ上升= 1.9 ms和τ衰减） 在375 nm激光照射下（= 1.7毫秒），表明使用vdWE纳米厚的γ-MnTe/云母对光电探测器进行柔性紫外线和广谱检测具有巨大潜力。
更新日期：2020-12-24
中文翻译：
用于高性能紫外和宽带光电探测器的纳米级亚稳态锌共混物γ-MnTe单晶膜
Van der Waals异质外延（vdWE）已被广泛开发，并被认为是用于生长高质量纳米级薄膜，共价键合半导体薄膜和异质结构以创建下一代柔性电子/光电器件的最有前途的异质外延技术缓解了对晶格匹配的严格要求及其优雅的剥离和转移到任何感兴趣的基材的性质。但是，vdWE路线在亚稳和人造材料和结构的生长中仍然缺乏应用。在这项工作中，通过使用分子束外延（MBE），通过细心地控制其生长动力学，在二维云母衬底上实现了亚稳态γ相纳米厚MnTe薄膜的外延。对于50 nm厚的外延膜，vdWEγ-MnTe薄膜具有良好的结晶度，其低半峰宽约为0.19°。而且，具有完美晶格，宽阔的结构在vdWE中发现具有直接电子跃迁结构的E g opt约为3.26 eV，具有从紫外线（UV）到近红外（NIR）的宽吸收区，并且在UV区的超高吸收系数超过10 6 cm –1纳米厚的γ-MnTe薄膜。具有vdWEγ-MnTe/云母系统的光电探测器在从紫外线到近红外区域显示出高灵敏度的宽带检测。检测器显示出出色的紫外线响应，具有526 AW –1的高响应度和2.46×10 12 Jones的比检测率，并显示出快速的光响应速度（τ上升= 1.9 ms和τ衰减） 在375 nm激光照射下（= 1.7毫秒），表明使用vdWE纳米厚的γ-MnTe/云母对光电探测器进行柔性紫外线和广谱检测具有巨大潜力。
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