This paper reports on the fabrication of a ferroelectric field effect transistor (FeFET) using a monolayer MoS₂ film and a perovskite GdNi_0.2Fe_0.8O₃ (GFNO) ferroelectric film. We demonstrate the tuning of electrical characteristics using pulse voltage to evoke a 2H–1T′ phase transition in the MoS₂. Coupling at the MoS₂–GFNO interface is the mechanism responsible for the electronic tuning. Locally reversing the ferroelectric polarization of the perovskite GFNO through the application of pulse voltage makes it possible to manipulate the carrier concentration and associated phase of the MoS₂ via heterostructure interactions. Our experiment results are supported by free energy calculations pertaining to heterostructures under the effects of an electric field. Analysis of the nonvolatile properties of the FeFET using the scanning probe method and scanning photoelectron spectroscopy revealed that the transition indeed occurred across much of the device landscape. The design established in this study paves the way to the development of laterally two-dimensional FeFET, which could provide nonvolatile characteristics with a less destructive read–write process.

中文翻译：

---

MoS _{2 –}钙钛矿铁电场效应晶体管的脉冲介导电子调谐

本文报道了使用单层MoS ₂膜和钙钛矿GdNi _0.2 Fe _0.8 O ₃（GFNO）铁电膜制造铁电场效应晶体管（FeFET）的情况。我们演示了使用脉冲电压在MoS _2中引起2H–1T'相变的电特性调整。MoS ₂ –GFNO接口上的耦合是负责电子调谐的机制。通过施加脉冲电压局部逆转钙钛矿GFNO的铁电极化，可以控制MoS ₂的载流子浓度和相关相通过异质结构相互作用。我们的实验结果得到电场作用下与异质结构有关的自由能计算的支持。使用扫描探针法和扫描光电子能谱对FeFET的非易失性特性进行分析后发现，过渡确实发生在器件的大部分表面上。在这项研究中建立的设计为横向二维FeFET的开发铺平了道路，该技术可以通过较少破坏性的读写过程提供非易失性特性。