In this study, (CuO doped PVA) composite material was deposited using spin coating technique on n-Si and the Au/CuO-PVA/n-Si Metal/Polymer/Semiconductor type Schottky Barrier Diodes (MPS type SBDs) were fabricated. The electrical measurements of Au/CuO-PVA/n-Si SBDs were realized in the dark and under various UV (365 nm) light intensities ranging from 50 to 250 mW/cm². The basic parameters of the MPS type SBDs such as leakage current (I₀), zero bias barrier height (Φ_B0), barrier height (Φ_B), ideality factor (n), series resistance (R_s), shunt resistance (R_sh), rectification rate (RR), photocurrent (I_pc) and surface states (N_ss) were obtained Current-Voltage (I–V) plot based on Thermionic Emission (TE) theory, and Norde function depending on the UV light intensity. As the light intensity increases, RR, R_sh, Φ_B0, and Φ_B decreased but the n and I₀ increased. In addition, the increase of UV light intensity caused the increase of photocurrent in MPS type SBDs and thus MPS type SBDs exhibited more ohmic behavior.

在这项研究中，使用旋涂技术将（CuO掺杂的PVA）复合材料沉积在n-Si上，并制造了Au / CuO-PVA / n-Si金属/聚合物/半导体型肖特基势垒二极管（MPS型SBD）。Au / CuO-PVA / n-Si SBD的电学测量是在黑暗中以及在50至250 mW / cm ^2的各种UV（365 nm）光强度下进行的。的MPS型SBD的基本参数，例如漏电流（我₀），零个偏压势垒高度（Φ _B0），势垒高度（Φ_乙），理想因子（Ñ），串联电阻（ř_小号），分流电阻（ř _sh），整流率（RR），光电流（I _pc）和表面状态（N _ss）是基于热电子发射（TE）理论获得的电流-电压（IV）图，而取决于紫外线强度的Norde函数。随着光强度的增加，RR，- [R _SH，Φ _B0，和Φ_乙降低，但Ñ和余₀增加。另外，UV光强度的增加导致MPS型SBD中的光电流增加，因此MPS型SBD显示出更多的欧姆行为。