Abstract Transition-metal dichalcogenides are promising alternatives to conventional materials for next-generation devices owing to their unique characteristics. Because efficient doping is difficult, in designing devices, more than two materials are typically heterogeneously junctioned via van der Waals (vdW) bonds. However, unintended effects at the vdW heterojunction due to lattice mismatch or trap-assisted transport limit the device performance. In this study, we fabricated a vdW homojunction p–n diode with elementally doped WSe2. The device made of pristine WSe2 exhibited forward diode characteristics with an ideal transport characteristic. When WSe2 was doped with the p-dopant bis(trifluoromethane) sulfonimide, the carrier transport mechanism changed from diffusion to tunneling. The device rectified the forward current with a high rectification ratio of 2 × 105 at 300 K. This study provides a comprehensive understanding of the carrier transport mechanism in a high-performance backward vdW homojunction diode.

中文翻译：

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通过 WSe2 范德华同质结二极管的近乎理想界面的载流子传输

摘要 过渡金属二硫属化物由于其独特的特性而成为下一代器件传统材料的有前途的替代品。由于难以进行有效掺杂，因此在设计器件时，通常会通过范德华 (vdW) 键异质连接两种以上的材料。然而，由于晶格失配或陷阱辅助传输导致的 vdW 异质结意外影响限制了器件性能。在这项研究中，我们制造了一个元素掺杂 WSe2 的 vdW 同质结 p-n 二极管。由原始 WSe2 制成的器件表现出具有理想传输特性的正向二极管特性。当 WSe2 掺杂 p-掺杂剂双（三氟甲烷）磺酰亚胺时，载流子传输机制从扩散转变为隧穿。