The thin films of BFO, binary-doped Bi_0.96Sr_0.04Fe_0.98Co_0.02O₃, and multi-doped Bi_0.96Sr_0.04Fe_0.94Mn_0.04Co_0.02O₃ are fabricated using the sol–gel method. To study the mechanism for the enhanced intrinsic ferroelectricity in multi-doped BFO, this work uses related aspects including the electrostatic potential energy, the Fermi level, and the Schottky interface barrier. Using multi-doped BFO can reduce the height of the electrostatic barrier and change the Fermi level so that the Schottky barrier height is increased to reduce the leakage current, thereby improving the intrinsic ferroelectricity. Also, using multivalent Mn with a double-exchange effect improves the ferromagnetism. These improved intrinsic ferroelectric and ferromagnetic properties make BFO applicable in various practical devices and fields.

BFO，Bi掺杂Bi _0.96 Sr _0.04 Fe _0.98 Co _0.02 O ₃和Bi掺杂Bi _0.96 Sr _0.04 Fe _0.94 Mn _0.04 Co _0.02 O ₃的薄膜使用溶胶-凝胶法制备。为了研究多掺杂BFO中增强本征铁电的机理，这项工作使用了相关方面，包括静电势能，费米能级和肖特基界面势垒。使用多掺杂的BFO可以减小静电势垒的高度并改变费米能级，从而增加肖特基势垒的高度以减小漏电流，从而改善固有铁电性。而且，使用具有双交换作用的多价Mn改善了铁磁性。这些改进的固有铁电和铁磁特性使BFO可应用于各种实际设备和领域。