Single crystals of Indium Selenide (InSe) were successfully grown by direct vapor transport method. The grown crystals were characterized by estimating their surface morphology, chemical composition, structural, optical and photoconductive properties using appropriate techniques. SEM image suggested that InSe crystal has layered-type surface without morphological defects. Also, the hexagonal structure of crystal has been confirmed by X-ray diffraction (XRD) spectra and selected area electron diffraction (SAED) pattern. The crystal exhibits high absorption coefficient (10⁴ cm⁻¹) in visible region and direct bandgap of 1.22 eV. The trap depth parameters and photoconductivity parameters were determined by the growth-decay curve and they depend upon illumination intensity, temperature and wavelength of incident light. The grown InSe crystals have excellent photoconductive properties and hence can be utilized in different photoelectrical applications.

通过直接气相传输法成功地生长了硒化铟（InSe）单晶。通过使用适当的技术估算晶体的表面形态，化学组成，结构，光学和光电导特性来表征生长的晶体。SEM图像表明InSe晶体具有层状表面，没有形态缺陷。同样，晶体的六边形结构已经通过X射线衍射（XRD）光谱和选定区域电子衍射（SAED）图案得到了证实。晶体具有高吸收系数（10 ⁴ cm ^-1）在可见光区域和1.22 eV的直接带隙。陷阱深度参数和光电导率参数由生长衰减曲线确定，它们取决于照明强度，温度和入射光的波长。生长的InSe晶体具有优异的光电导性能，因此可以用于不同的光电应用中。