Monolithic integration of InP on Si by molten alloy driven selective area epitaxial growth,Nanoscale

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Monolithic integration of InP on Si by molten alloy driven selective area epitaxial growth
Nanoscale ( IF 5.8 ) Pub Date : 2020-11-23 , DOI: 10.1039/d0nr05779g
Dmitrii V. Viazmitinov _{1,

2,

3,

4} , Yury Berdnikov _{5,

6,

7} , Shima Kadkhodazadeh _{2,

3,

4,

8,

9} , Anna Dragunova _{7,

10,

11} , Nickolay Sibirev _{5,

6,

7} , Natalia Kryzhanovskaya _{7,

10,

11} , Ilya Radko _{2,

3,

4,

12,

13} , Alexander Huck _{2,

3,

4,

12,

13} , Kresten Yvind _{1,

2,

3,

4,

9} , Elizaveta Semenova _{1,

2,

3,

4,

9}

Affiliation

We report a new approach for monolithic integration of III–V materials into silicon, based on selective area growth and driven by a molten alloy in metal–organic vapor epitaxy. Our method includes elements of both selective area and droplet-mediated growths and combines the advantages of the two techniques. Using this approach, we obtain organized arrays of high crystalline quality InP insertions into (100) oriented Si substrates. Our detailed structural, morphological and optical studies reveal the conditions leading to defect formation. These conditions are then eliminated to optimize the process for obtaining dislocation-free InP nanostructures grown directly on Si and buried below the top surface. The PL signal from these structures exhibits a narrow peak at the InP bandgap energy. The fundamental aspects of the growth are studied by modeling the InP nucleation process. The model is fitted by our X-ray diffraction measurements and correlates well with the results of our transmission electron microscopy and optical investigations. Our method constitutes a new approach for the monolithic integration of active III–V materials into Si platforms and opens up new opportunities in active Si photonics.

中文翻译：

熔融合金驱动的选择性区域外延生长将InP单晶集成在Si上

我们报告了一种新的方法，该方法将III-V材料单片集成到硅中，这是基于选择性区域生长并受金属-有机蒸气外延中的熔融合金驱动的。我们的方法包括选择性区域和液滴介导的生长元素，并结合了两种技术的优势。使用这种方法，我们获得了高结晶质量的InP插入（100）取向的Si衬底的有序阵列。我们详细的结构，形态和光学研究揭示了导致缺陷形成的条件。然后消除这些条件，以优化获得无错位的InP纳米结构的工艺，该InP纳米结构直接生长在Si上并掩埋在顶部表面以下。来自这些结构的PL信号在InP带隙能量处表现出窄峰。通过模拟InP成核过程研究了生长的基本方面。该模型通过我们的X射线衍射测量进行拟合，并且与我们的透射电子显微镜和光学研究的结果紧密相关。我们的方法构成了将有源III–V材料单片集成到Si平台中的新方法，并为有源Si光子学打开了新的机遇。

更新日期：2020-11-25

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