This paper is devoted to the investigation of inverse problems related to stationary drift-diffusion equations modeling semiconductor devices. In this context we analyze several identification problems corresponding to different types of measurements, where the parameter to be reconstructed is an inhomogeneity in the PDE model (doping profile). For a particular type of measurement (related to the voltage-current map) we consider special cases of drift-diffusion equations, where the inverse problems reduces to a classical inverse conductivity problem. A numerical experiment is presented for one of these special situations (linearized unipolar case).

中文翻译：

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关于半导体方程的反问题

本文致力于研究与静态漂移扩散方程建模半导体器件有关的反问题。在这种情况下，我们分析了与不同类型的测量相对应的几个识别问题，其中要重建的参数是PDE模型（掺杂分布）中的不均匀性。对于特定类型的测量（与电压-电流图有关），我们考虑漂移扩散方程的特殊情况，其中反问题简化为经典反电导问题。针对这些特殊情况之一（线性单极情况）进行了数值实验。