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Absence of Magnetic Proximity Effect at the Interface ofBi2Se3and(Bi,Sb)2Te3with EuS
Physical Review Letters ( IF 8.1 ) Pub Date : 2020-11-24 , DOI: 10.1103/physrevlett.125.226801 A. I. Figueroa , F. Bonell , M. G. Cuxart , M. Valvidares , P. Gargiani , G. van der Laan , A. Mugarza , S. O. Valenzuela
Physical Review Letters ( IF 8.1 ) Pub Date : 2020-11-24 , DOI: 10.1103/physrevlett.125.226801 A. I. Figueroa , F. Bonell , M. G. Cuxart , M. Valvidares , P. Gargiani , G. van der Laan , A. Mugarza , S. O. Valenzuela
We performed x-ray magnetic circular dichroism (XMCD) measurements on heterostructures comprising topological insulators (TIs) of the family and the magnetic insulator EuS. XMCD measurements allow us to investigate element-selective magnetic proximity effects at the very TI/EuS interface. A systematic analysis reveals that there is neither significant induced magnetism within the TI nor an enhancement of the Eu magnetic moment at such interface. The induced magnetic moments in Bi, Sb, Te, and Se sites are lower than the estimated detection limit of the XMCD measurements of .
中文翻译:
Bi2Se3和(Bi,Sb)2Te3与EuS的界面上没有磁邻近效应
我们对包含拓扑绝缘子(TI)的异质结构进行了X射线磁性圆二色谱(XMCD)测量。 家庭和磁性绝缘子EuS。XMCD测量使我们能够在TI / EuS界面处研究元素选择磁接近效应。系统分析表明,TI内部既没有明显的感应磁性,也没有在这种界面处增强Eu磁矩。Bi,Sb,Te和Se位置的感应磁矩低于XMCD测量的估计检测极限。
更新日期:2020-11-25
中文翻译:
Bi2Se3和(Bi,Sb)2Te3与EuS的界面上没有磁邻近效应
我们对包含拓扑绝缘子(TI)的异质结构进行了X射线磁性圆二色谱(XMCD)测量。 家庭和磁性绝缘子EuS。XMCD测量使我们能够在TI / EuS界面处研究元素选择磁接近效应。系统分析表明,TI内部既没有明显的感应磁性,也没有在这种界面处增强Eu磁矩。Bi,Sb,Te和Se位置的感应磁矩低于XMCD测量的估计检测极限。