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Gated two-dimensional electron gas in magnetic field: Nonlinear versus linear regime
Physical Review B ( IF 3.2 ) Pub Date : 2020-11-24 , DOI: 10.1103/physrevb.102.205305
N. Dyakonova , M. Dyakonov , Z. D. Kvon

We study the effect of magnetic field on the properties of a high-mobility gated two-dimensional electron gas in a field-effect transistor with the Hall bar geometry. When approaching the current saturation when the drain side of the channel becomes strongly depleted, we see a number of unusual effects related to the magnetic field induced redistribution of the electron density in the conducting channel. The experimental results obtained in the nonlinear regime have been interpreted based on the results obtained in the linear regime by a simple theoretical model, which describes quite well our observations.

中文翻译:

磁场中的门控二维电子气:非线性与线性状态

我们研究了磁场对具有霍尔棒几何形状的场效应晶体管中高迁移率门控二维电子气特性的影响。当沟道的漏极侧严重耗尽时,当接近电流饱和时,我们看到许多与磁场引起的导电沟道中电子密度的重新分布有关的异常现象。在非线性状态下获得的实验结果已通过简单理论模型基于线性状态下获得的结果进行了解释,该模型很好地描述了我们的观察结果。
更新日期:2020-11-25
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