Abstract This paper focuses on the simulation and optimization of electrical and structural properties of high efficiency InGaP/InGaAs/Ge triple junction solar cells that incorporate In0.7Ga0.3As quantum dots with in the GaAs middle cell material. Current density-voltage (J-V), external quantum efficiency (EQE) and capacitance-voltage (C-V) characteristics have been simulated and discussed. Results show that 30 pairs of In0.70Ga0.30As (QD)/GaAs (barrier) in the middle cell provide a relative enhancement of 13 % in EQE in the 900-1000 nm wavelength range. This leads to a short-circuit current of 20 mA/cm2, an open circuit voltage of 2.3 V, a fill factor of 81.73 %, and a conversion efficiency of 39.03 %. The C-V revealed that a relatively high number of interfacial states are present in the 3-J cell structure including the QD layers, which decreases the open circuit voltage. In this study we benefited 18% of relative efficiency.

中文翻译：

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In0.70Ga0.30As量子点插入InyGa1-yP/InxGa1-xAs/Ge三联结中间电池对太阳能电池的影响

摘要 本文重点研究了在 GaAs 中间电池材料中加入 In0.7Ga0.3As 量子点的高效 InGaP/InGaAs/Ge 三结太阳能电池的电学和结构特性的模拟和优化。对电流密度-电压 (JV)、外量子效率 (EQE) 和电容-电压 (CV) 特性进行了模拟和讨论。结果表明，中间单元中的 30 对 In0.70Ga0.30As (QD)/GaAs（势垒）在 900-1000 nm 波长范围内提供了 13% 的 EQE 相对增强。这导致短路电流为 20 mA/cm2，开路电压为 2.3 V，填充因子为 81.73%，转换效率为 39.03%。CV 显示，包括 QD 层在内的 3-J 电池结构中存在相对较多的界面态，从而降低开路电压。在这项研究中，我们获得了 18% 的相对效率。