The built-in bipolar junction transistor of H-gate partially depleted SOI NMOS was characterized by measuring the common-emitter output curve and calculating the common-emitter current gain. Unoptimized doping results in a low common-emitter current gain. The bias state of the front gate of the MOS has a significant influence on the characteristics of the built-in BJT. The geometry effect of the device is also studied. It is proved by mathematical analysis that the emitter current crowding effect also exists on the built-in BJT.

中文翻译：

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H栅极PD-SOI NMOS中内置双极结型晶体管的特性

H栅极部分耗尽的SOI NMOS的内置双极结型晶体管的特征在于测量共射极输出曲线并计算共射极电流增益。未优化的掺杂导致较低的共发射极电流增益。MOS的前栅极的偏置状态对内置BJT的特性有重大影响。还研究了装置的几何效应。通过数学分析证明，内置BJT还存在发射极电流拥挤效应。