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High figure of merit of Sb 2.18 Te 3 achieved via modulating stoichiometric ratio with chemical method
Journal of Materials Science: Materials in Electronics ( IF 2.8 ) Pub Date : 2020-11-24 , DOI: 10.1007/s10854-020-04834-1
Yiwei Zhao , Haiying Wang , Hongyu Ma , Xiang Yu , Yong Liu , Xingzhong Zhang , Rui Xiong , Jing Shi

Doping an element or more is widely used to regulate thermoelectric materials performance through adjusting electrical and thermal properties. In this work, a series of p-type Sb2(1+x)Te3 nanoflake composites are fabricated and tested. Excessive Sb in Sb2(1+x)Te3 causes high carrier density, which results in much larger electrical conductivity compared with that of pure Sb2Te3. The highest merit ZT of the Sb2.18Te3 composite reaches to 1.22 at 523 K, and the average ZT value in Sb2.18Te3 sample is above 1 obtained from 323 to 523 K, which is a decent ZT value at low–mid temperature zone for doped Sb2Te3-based composites. Self-doping element Sb into Sb2Te3 nanoflakes is an effective strategy that has a significant influence on improving power factor and keeping low thermal conductivity. Sb2(1+x)Te3 nanostructure composites are synthesized by reflux chemical method. Comparing with other methods involving solid solution melting, high-energy ball milling and solvothermal reaction, reflux chemical reaction method is not only a more facile, timesaving and green way to produce nanoscale materials but also can be applied to mass production.



中文翻译:

通过化学方法调节化学计量比可实现Sb 2.18 Te 3的高品质

掺杂元素或多种元素广泛用于通过调节电和热性能来调节热电材料的性能。在这项工作中,制造和测试了一系列p型Sb 2(1+ x Te 3纳米片状复合材料。Sb 2(1+ x Te 3中的Sb过多会导致高载流子密度,与纯Sb 2 Te 3相比,电导率要大得多。的Sb的最高品质因数ZT 2.183复合达到1.22在523 K,并以Sb平均ZT值2.183样品从323 K到523 K获得的1以上,这是掺杂Sb 2 Te 3基复合材料在中低温度区的ZT值。自掺杂元素Sb到Sb 2 Te 3纳米薄片中是一种有效的策略,对提高功率因数和保持低导热率具有重要影响。采用回流化学方法合成了Sb 2(1+ x Te 3纳米结构复合材料。与其他涉及固溶熔融,高能球磨和溶剂热反应的方法相比,回流化学反应方法不仅是一种更简便,省时,绿色的生产纳米级材料的方法,而且可以应用于批量生产。

更新日期:2020-11-25
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