Doping an element or more is widely used to regulate thermoelectric materials performance through adjusting electrical and thermal properties. In this work, a series of p-type Sb_2(1+x)Te₃ nanoflake composites are fabricated and tested. Excessive Sb in Sb_2(1+x)Te₃ causes high carrier density, which results in much larger electrical conductivity compared with that of pure Sb₂Te₃. The highest merit ZT of the Sb_2.18Te₃ composite reaches to 1.22 at 523 K, and the average ZT value in Sb_2.18Te₃ sample is above 1 obtained from 323 to 523 K, which is a decent ZT value at low–mid temperature zone for doped Sb₂Te₃-based composites. Self-doping element Sb into Sb₂Te₃ nanoflakes is an effective strategy that has a significant influence on improving power factor and keeping low thermal conductivity. Sb_2(1+x)Te₃ nanostructure composites are synthesized by reflux chemical method. Comparing with other methods involving solid solution melting, high-energy ball milling and solvothermal reaction, reflux chemical reaction method is not only a more facile, timesaving and green way to produce nanoscale materials but also can be applied to mass production.

掺杂元素或多种元素广泛用于通过调节电和热性能来调节热电材料的性能。在这项工作中，制造和测试了一系列p型Sb _{2（1+ x）} Te ₃纳米片状复合材料。Sb _{2（1+ x）} Te ₃中的Sb过多会导致高载流子密度，与纯Sb ₂ Te ₃相比，电导率要大得多。的Sb的最高品质因数ZT _2.18碲₃复合达到1.22在523 K，并以Sb平均ZT值_2.18碲₃样品从323 K到523 K获得的1以上，这是掺杂Sb ₂ Te ₃基复合材料在中低温度区的ZT值。自掺杂元素Sb到Sb ₂ Te ₃纳米薄片中是一种有效的策略，对提高功率因数和保持低导热率具有重要影响。采用回流化学方法合成了Sb _{2（1+ x）} Te ₃纳米结构复合材料。与其他涉及固溶熔融，高能球磨和溶剂热反应的方法相比，回流化学反应方法不仅是一种更简便，省时，绿色的生产纳米级材料的方法，而且可以应用于批量生产。