Two-dimensional semiconducting transition metal dichalcogenides embedded in optical microcavities in the strong exciton-photon coupling regime may lead to promising applications in spin and valley addressable polaritonic logic gates and circuits. One significant obstacle for their realization is the inherent lack of scalability associated with the mechanical exfoliation commonly used for fabrication of two-dimensional materials and their heterostructures. Chemical vapor deposition offers an alternative scalable fabrication method for both monolayer semiconductors and other two-dimensional materials, such as hexagonal boron nitride. Observation of the strong light-matter coupling in chemical vapor grown transition metal dichalcogenides has been demonstrated so far in a handful of experiments with monolayer molybdenum disulfide and tungsten disulfide. Here we instead demonstrate the strong exciton-photon coupling in microcavities composed of large area transition metal dichalcogenide/hexagonal boron nitride heterostructures made from chemical vapor deposition grown molybdenum diselenide and tungsten diselenide encapsulated on one or both sides in continuous few-layer boron nitride films also grown by chemical vapor deposition. These transition metal dichalcogenide/hexagonal boron nitride heterostructures show high optical quality comparable with mechanically exfoliated samples, allowing operation in the strong coupling regime in a wide range of temperatures down to 4 Kelvin in tunable and monolithic microcavities, and demonstrating the possibility to successfully develop large area transition metal dichalcogenide based polariton devices.

在强激子-光子耦合机制中嵌入光学微腔中的二维半导体过渡金属二卤化物可能会在自旋和谷可寻址的极化逻辑门和电路中带来有希望的应用。实现它们的一个重大障碍是与二维材料及其异质结构的制造中通常使用的机械剥离相关的固有的可扩展性的固有缺乏。化学气相沉积为单层半导体和其他二维材料（例如六方氮化硼）提供了另一种可扩展的制造方法。到目前为止，在使用单层二硫化钼和二硫化钨进行的少数实验中，已经证明了在化学气相生长的过渡金属二硫化二氢中有很强的光-质耦合。在这里，我们相反地证明了微腔中的强激子-光子耦合，该微腔由大面积的过渡金属二卤化硅/六方氮化硼异质结构组成，该异质结构由化学气相沉积生长的二硒化钼和二硒化钨封装在连续的几层氮化硼薄膜的一侧或两侧中。通过化学气相沉积生长。这些过渡金属二硫化氢/六方氮化硼异质结构显示出与机械剥离样品相当的高光学质量，