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All-dielectric Multifunctional Transmittance-Tunable Metasurfaces Based on Guided-Mode Resonance and ENZ Effect
Nanotechnology ( IF 2.9 ) Pub Date : 2020-11-20 , DOI: 10.1088/1361-6528/abc3e5
Xiaoming Qiu 1 , Jian Shi 1 , Yanping Li 1 , Fan Zhang 1
Affiliation  

Electrically tunable metasurfaces open new doors for manipulating the phase, amplitude and polarization of light in ultrathin layers. Compared with metal assisted metasurfaces, all-dielectric transmission metasurfaces with outstanding feature of low loss, especially incorporating with new electro-optical materials, show great potentials for the next generation flat optics. In this study, by combining the epsilon-near-zero (ENZ) effect in indium tin oxide (ITO) with guided-mode resonance (GMR), we propose novel electrically tunable all-dielectric metasurface architectures with versatile functions for widespread potential applications. The inserted periodic ITO and hafnium oxide (HfO2) layers sandwiched in silicon act as two metal-oxide-semiconductor (MOS) capacitors in a single period to disturb the resonance wavelength in the near-infrared spectral range under voltage applied. For one-dimension (1D) structure, the transmittances of this metasurface at 1512 and 1510 nm change 20 and -14 dB under 0~5 V bias voltage, respectively. Besides, the bilayer structure performs well in double-waveband applications, indicating that more layers can support more operation wavebands. Meanwhile, the two-dimension (2D) structure works as a polarization insensitive device when setting the same structural parameters in both orthogonal directions. The proposed architectures, with various merits including ultra-compact size, high-speed and complementary metal-oxide-semiconductor (CMOS) compatibility, provides a multifunctional and multi-degree-of-freedom design, as well as enormous potential applications in more complicated flat optics.

中文翻译:

基于导模共振和 ENZ 效应的全电介质多功能透射率可调超表面

电可调谐超表面为操纵超薄层中光的相位、幅度和偏振打开了新的大门。与金属辅助超表面相比,全电介质透射超表面具有低损耗的突出特点,特别是与新型电光材料的结合,在下一代平面光学中显示出巨大的潜力。在这项研究中,通过将氧化铟锡 (ITO) 中的 epsilon-near-zero (ENZ) 效应与导模共振 (GMR) 相结合,我们提出了具有多种功能的新型电可调全电介质超表面结构,可用于广泛的潜在应用。插入的周期性 ITO 和氧化铪 (HfO2) 层夹在硅中,在单个周期内充当两个金属氧化物半导体 (MOS) 电容器,以在施加电压的情况下干扰近红外光谱范围内的谐振波长。对于一维 (1D) 结构,该超表面在 1512 和 1510 nm 处的透射率在 0~5 V 偏置电压下分别变化 20 和 -14 dB。此外,双层结构在双波段应用中表现良好,表明更多的层可以支持更多的工作波段。同时,当在两个正交方向上设置相同的结构参数时,二维(2D)结构作为偏振不敏感器件。所提出的架构具有各种优点,包括超紧凑的尺寸,
更新日期:2020-11-20
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