The synthesis of the silicon nanowires is carried out at 250°C under pure hydrogen plasma from monocrsytalline silicon substrates or amorphous silicon thin film, using indium as a catalyst. Studies have been carried out in function of the duration of the hydrogen plasma. The results showed a growth of smooth surface nanowire arrays (diameter 100 nm, length 500 nm) from an indium thickness of 20 nm and a hydrogen plasma duration of 30 min. The growth of nanowires for longer hydrogen plasma durations has led to silicon nanowires with larger diameters and rougher surfaces, revealing the onset of secondary nanowire growth on these surfaces, probably due to the presence of indium residues. The results present a new procedure of Solid Liquid Solid (SLS) growth mode of silicon nanowires.

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纯氢等离子体在低温 (250°C) 下硅纳米线的 3D 生长

硅纳米线的合成是在 250°C 下在纯氢等离子体下从单晶硅衬底或非晶硅薄膜合成的，使用铟作为催化剂。已经根据氢等离子体的持续时间进行了研究。结果表明，从 20 nm 的铟厚度和 30 分钟的氢等离子体持续时间开始，光滑表面纳米线阵列（直径 100 nm，长度 500 nm）生长。更长氢等离子体持续时间的纳米线生长导致硅纳米线具有更大的直径和更粗糙的表面，揭示了这些表面上二次纳米线生长的开始，这可能是由于铟残留物的存在。结果提出了一种新的硅纳米线固液固 (SLS) 生长模式程序。