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Low-temperature deposition and hardness enhancement of α-(Al,Cr)2O3 films by reactive high power pulsed magnetron sputtering
Materials Research Express ( IF 1.8 ) Pub Date : 2020-11-20 , DOI: 10.1088/2053-1591/abc7e1
Yitian Cheng 1, 2 , Chenglin Chu 2 , Peng Zhou 1, 3
Affiliation  

This paper offers a method to grow corundum structure thin films of α-(Al,Cr)2O3 in a High Power Pulsed Magnetron Sputtering (HPPMS) system. The films were characterized by grazing incidence x-ray diffraction (GIXRD), scanning electron microscope (SEM), transmission electron microscope (TEM) and nanoindentation. The results indicate that stoichiometric α-(Al,Cr)2O3 film could be deposited at 540 C without the formation of other metastable phases. The stable process of the magnetron sputtering ensures the smooth and compact surface of the film composed of nano-scale particles. The Cr in films can induce the formation of solid solution and enhance the mechanical property of the films. The hardness of the α-(Al,Cr)2O3 was calculated as ∼25.6 GPa, which is much higher than that of the film deposited using the Al target. These results are considered have positive effect on the low-cost depositing α-phase alumina films on high speed steel substrates as cutting tools.



中文翻译:

反应性高功率脉冲磁控溅射法低温沉积α-(Al,Cr)2 O 3薄膜并提高硬度

本文提供了一种在高功率脉冲磁控溅射(HPPMS)系统中生长α-(Al,Cr)2 O 3刚玉结构薄膜的方法。薄膜的特征在于掠入射X射线衍射(GIXRD),扫描电子显微镜(SEM),透射电子显微镜(TEM)和纳米压痕。结果表明,化学计量的α-(Al,Cr)2 O 3可以在540℃下沉积膜而不形成其他亚稳相。磁控溅射的稳定过程可确保由纳米级颗粒组成的薄膜的表面光滑致密。薄膜中的Cr可以诱导固溶体的形成并增强薄膜的机械性能。经计算,α-(Al,Cr)2 O 3的硬度约为25.6 GPa,比使用Al靶沉积的膜的硬度高得多。这些结果被认为对在作为切削工具的高速钢基底上低成本沉积α相氧化铝膜具有积极的影响。

更新日期:2020-11-20
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