Besides the commercial success in power electronics, GaN-based devices are also considered as a promising candidate in sensors or high-frequency applications. In such applications, ultra-low turn-on voltage (V _T) is highly demanded to realize low power consumption and high sensitivity. In this paper, we approach ultra-low V _T in a novel Γ-shaped anode AlGaN/GaN Schottky barrier diode (SBD) using an ultra-thin barrier (UTB) and fluorine ions implantation (FI). Benefiting from the low-work-function anode and UTB, the proposed device exhibits ultra-low V _T that is lower than 0.1 V. Simultaneously, the trenched anode plate and FI region provide a good reverse blocking capability. According to the numerical analysis, when the fluorine ions implantation length (L _FI) is 3 μm and the fluorine ions concentration (N _FI) is cm⁻³, a favorable Baliga figure-of-merits (BFOM) of 33.0 KW mm⁻¹ can be achieved. Compared to the conventional SBD and the SBD with pure Γ-shaped anode, the proposed device experiences at least 90% enhancement of BFOM, rendering the proposed ΓF-SBD performs potential in high-power and high-frequency applications such as microwave sensing and wireless power transmission.

除了在功率电子领域取得商业成功之外，基于GaN的器件也被认为是传感器或高频应用中的有希望的候选者。在这样的应用中，为了实现低功耗和高灵敏度，对超低导通电压（V _T）的要求很高。在本文中，我们接近超低V _Ť在使用超薄阻挡（UTB）和氟离子注入（FI）一种新颖的Γ形阳极的AlGaN / GaN肖特基势垒二极管（SBD）。受益于低功函数阳极和UTB，该拟议器件具有超低V _T低于0.1V。同时，带沟槽的阳极板和FI区提供了良好的反向阻断能力。根据数值分析中，当氟离子注入长度（大号 _FI）为3 μ m和氟离子浓度（Ñ _FI）是厘米^-3的33.0 KW毫米，有利Baliga图-的-优点（BFOM）^{- 1}可以实现。与传统的SBD和带有纯Γ形阳极的SBD相比，该器件的BFOM至少提高了90％，从而使该ΓF-SBD在微波和无线等大功率和高频应用中发挥了潜力电力传输。