The scaling down of modern devices beyond 15 nm has faced major setbacks as it engendered short channel effects which were seemingly inexorable. One of the solutions proposed was to replace the conventional silicon channel with carbon nanotubes (CNTs), giving rise to the carbon nanotube field-effect transistor (CNTFET). CNTs provide unrivaled electrical and mechanical properties which make them an attractive alternative to silicon for channel materials. In this research work, a cylindrical gate CNTFET model is proposed, and its performance is studied and compared with existing experimental results. The performance of the device due to the variation in the doping profile of the source and drain is studied to realize a device that can manifest superior characteristics compared with existing devices. A model with a non-uniform doping profile is proposed that results in a significant reduction in leakage current. The characteristics upon which the performance is evaluated are the on/off current ratio (I _ON/I _OFF), subthreshold swing (SS), and threshold voltage. By adjusting various parameters, a device is constructed with I _ON/I _OFF of 4 10⁶, SS of 63 mV dec⁻¹ (approximately), and a threshold voltage of 0.45 V, which performs better than existing devices shown in the literature. All the simulations have been performed by employing the nonequilibrium Green’s function formalism with the self-consistent solution of the Schrdinger and Poisson equations.

超过15 nm的现代设备的缩小规模面临重大挫折，因为它引起了似乎不可阻挡的短通道效应。提出的解决方案之一是用碳纳米管（CNT）代替传统的硅通道，从而产生了碳纳米管场效应晶体管（CNTFET）。CNT具有无与伦比的电气和机械性能，这使其成为沟道材料的一种有吸引力的替代硅的替代品。在这项研究工作中，提出了圆柱形栅极CNTFET模型，并对其性能进行了研究并与现有的实验结果进行了比较。研究了由于源极和漏极的掺杂分布的变化而引起的器件性能，以实现一种与现有器件相比具有优良特性的器件。提出了具有非均匀掺杂分布的模型，该模型可显着降低漏电流。评估性能的特性是开/关电流比（I _ON / I _OFF），亚阈值摆幅（SS）和阈值电压。通过调节各种参数，构造了一种器件，其I _ON / I _OFF为4 10 ⁶，SS为63 mV dec ^-1（大约），阈值电压为0.45 V，其性能优于文献中所示的现有器件。所有的模拟都是通过使用非平衡格林函数形式主义和Schrdinger和Poisson方程的自洽解来进行的。