By providing an effective way to leverage nonlinear phenomena in integrated devices, high-Q optical resonators have led to recent advances in on-chip photonics. However, developing fabrication processes to shape any new material into a resonator with extremely smooth surfaces on a chip has been an exceptionally challenging task. Here, we describe a universal method to implement ultra-high-Q resonators with any new material having desirable properties that can be deposited by physical vapor deposition. Using this method light-guiding cores with surface roughness on the molecular-scale are created automatically on pre-patterned substrates. Its efficacy has been verified using As₂S₃, a chalcogenide glass that has high-nonlinearity. The Q-factor of the As₂S₃ resonator so-developed approached the propagation loss record achieved in chalcogenide fibers which were limited by material losses. Owing to the boosted Q-factor, lasing by stimulated Brillouin scattering has been demonstrated with 100 times lower threshold power than the previous record.

通过提供一种有效的方法来利用集成器件中的非线性现象，高Q光谐振器已导致片上光子学的最新进展。然而，开发制造工艺以将任何新材料成形为芯片上具有极其光滑表面的谐振器一直是一项极具挑战性的任务。在这里，我们描述了一种通用方法，用任何具有理想特性的新材料来实现超高Q谐振器，这些新特性可以通过物理气相沉积来沉积。使用这种方法，可以在预先构图的基板上自动创建具有分子级表面粗糙度的导光芯。使用具有高非线性度的硫族化物玻璃As ₂ S ₃验证了其功效。As ₂ S的Q因子如此开发的_3个谐振器接近硫族化物纤维中的传播损耗记录，该记录受材料损耗的限制。由于提高了Q因子，已证明受激布里渊散射引起的激光的阈值功率比以前的记录低100倍。