Failure analysis of thin‐film four‐junction inverted metamorphic solar cells,Progress in Photovoltaics

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Failure analysis of thin‐film four‐junction inverted metamorphic solar cells
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2020-11-22 , DOI: 10.1002/pip.3355
Junhua Long _{1,

2} , Dongying Wu ₁ , Xinping Huang ₁ , Sai Ye ₁ , Xuefei Li _{1,

2} , Lian Ji ₁ , Qiangjian Sun ₁ , Minghui Song ₃ , Zhiwei Xing _{1,

2} , Shulong Lu ₁

Affiliation

Inverted metamorphic solar cells play an important role in the field of photovoltaics, because it can directly grow stacked tandem junctions with different bandgaps according to the spectrum. We have found that the four‐junction AlGaInP/AlGaAs/InGaAs/InGaAs solar cells with the bandgap of 1.96/1.55/1.17/0.83 eV on the basis of the inverted metamorphic three‐junction AlGaInP/AlGaAs/InGaAs materials will cause a serious decrease in short‐circuit current density but with a normal open‐circuit voltage. The sharp decrease in short‐circuit current density is not attributed to the mismatched buffers dislocations penetrating into the active region of the InGaAs subcells but resulted from the minority carrier recombination due to defects in the AlGaInP subcell, which is observed directly from transmission electron microscopy, external quantum efficiency, electroluminescence, and secondary ion mass spectrometry measurements. The process of growing AlGaInP materials by metal–organic chemical vapor deposition easily introduces Al‐O deep‐level defects, resulting in the poor collection of minority carriers in AlGaInP materials. After improving the growth conditions of AlGaInP materials, a four‐junction solar cell with a photoelectric conversion efficiency of 34.9% and an open‐circuit voltage of 3.53 V was obtained.

中文翻译：

薄膜四结倒置变质太阳能电池的失效分析

倒置变质太阳能电池在光伏领域中起着重要作用，因为它可以根据光谱直接生长具有不同带隙的堆叠串联结。我们已经发现，基于倒置变质三结AlGaInP / AlGaAs / InGaAs材料的带隙为1.96 / 1.55 / 1.17 / 0.83 eV的四结AlGaInP / AlGaAs / InGaAs / InGaAs太阳电池将导致严重降低短路电流密度，但具有正常的开路电压。短路电流密度的急剧下降并非归因于不匹配的缓冲剂位错渗透到InGaAs子电池的有源区中，而是归因于AlGaInP子电池中的缺陷引起的少数载流子复合，这是直接从透射电子显微镜观察到的，外部量子效率电致发光和二次离子质谱测量。通过金属有机化学气相沉积法生长AlGaInP材料的过程很容易引入Al-O深层缺陷，从而导致AlGaInP材料中的少数载流子收集不良。在改善了AlGaInP材料的生长条件之后，获得了具有34.9％的光电转换效率和3.53 V的开路电压的四结太阳能电池。

更新日期：2021-01-29

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