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Self‐Driven WSe2/Bi2O2Se Van der Waals Heterostructure Photodetectors with High Light On/Off Ratio and Fast Response
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2020-11-23 , DOI: 10.1002/adfm.202008351 Peng Luo 1 , Fakun Wang 1 , Jingyu Qu 1 , Kailang Liu 1 , Xiaozong Hu 1, 2 , Kewei Liu 3 , Tianyou Zhai 1
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2020-11-23 , DOI: 10.1002/adfm.202008351 Peng Luo 1 , Fakun Wang 1 , Jingyu Qu 1 , Kailang Liu 1 , Xiaozong Hu 1, 2 , Kewei Liu 3 , Tianyou Zhai 1
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Benefiting from the superior electron mobility and good air‐stability, the emerging layered bismuth oxyselenide (Bi2O2Se) nanosheet has received considerable attention with the promising prospects for electronics and optoelectronics applications. However, the high charge carrier concentration and bolometric effect of Bi2O2Se give rise to the high dark current and relatively slow photoresponse, which severely impede further improvement of the performance of Bi2O2Se based photodetectors. Here, a WSe2/Bi2O2Se Van der Waals p‐n heterostructure is reported with a pronounced rectification ratio of 105 and a low reverse dark current of 10−11 A, as well as an enhanced light on/off ratio up to 618 under 532 nm light illumination. The device also exhibits a fast response speed of 2.6 µs and a broadband detection capability from 365 to 2000 nm due to the efficient charge separation and strong interlayer coupling at the interface of the two flakes. Importantly, the built‐in potential in the WSe2/Bi2O2Se heterostructure offers a competitive self‐powered photodetector with the light on/off ratio above 105 and a photovoltaic responsivity of 284 mA W−1. The WSe2/Bi2O2Se heterostructure shows promising potentials for high‐performance self‐driven photodetector applications.
中文翻译：
自驱动WSe2 / Bi2O2Se Van der Waals异质结构光电探测器，具有高光通/断比和快速响应
得益于优异的电子迁移率和良好的空气稳定性，新兴的层状氧化硒化铋（Bi 2 O 2 Se）纳米片受到了广泛的关注，在电子和光电子应用方面具有广阔的前景。然而，Bi 2 O 2 Se的高电荷载流子浓度和辐射热效应导致高暗电流和相对较慢的光响应，这严重阻碍了Bi 2 O 2 Se基光电探测器性能的进一步提高。在此，据报道WSe 2 / Bi 2 O 2 Se Van der Waals p‐n异质结构的整流比为105和10 -11 A的低反向暗电流，以及在532 nm光照下高达618的增强的光通/断比。由于有效的电荷分离和两个薄片界面之间的牢固层间耦合，该器件还具有2.6 µs的快速响应速度和365至2000 nm的宽带检测能力。重要的是，WSe 2 / Bi 2 O 2 Se异质结构中的内置电势提供了竞争性的自供电光电探测器，其光通/断比大于10 5，光电响应度为284 mA W -1。WSe 2 / Bi 2 O 2硒异质结构在高性能自驱动光电探测器应用中显示出广阔的前景。
更新日期：2020-11-23
中文翻译：
自驱动WSe2 / Bi2O2Se Van der Waals异质结构光电探测器，具有高光通/断比和快速响应
得益于优异的电子迁移率和良好的空气稳定性，新兴的层状氧化硒化铋（Bi 2 O 2 Se）纳米片受到了广泛的关注，在电子和光电子应用方面具有广阔的前景。然而，Bi 2 O 2 Se的高电荷载流子浓度和辐射热效应导致高暗电流和相对较慢的光响应，这严重阻碍了Bi 2 O 2 Se基光电探测器性能的进一步提高。在此，据报道WSe 2 / Bi 2 O 2 Se Van der Waals p‐n异质结构的整流比为105和10 -11 A的低反向暗电流，以及在532 nm光照下高达618的增强的光通/断比。由于有效的电荷分离和两个薄片界面之间的牢固层间耦合，该器件还具有2.6 µs的快速响应速度和365至2000 nm的宽带检测能力。重要的是，WSe 2 / Bi 2 O 2 Se异质结构中的内置电势提供了竞争性的自供电光电探测器，其光通/断比大于10 5，光电响应度为284 mA W -1。WSe 2 / Bi 2 O 2硒异质结构在高性能自驱动光电探测器应用中显示出广阔的前景。
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