In this paper, experimental J–V and external quantum efficiency (EQE) have been validated by the simulation model to show the improvement of the perovskite (PSK) solar cell (PSC) efficiency. The effect of interface properties at the electron transport layer (ETL) /PSK and PSK/hole transport layer (HTL) were examined with Solar Cell Capacitance Simulator (SCAPS). The interfaces between ETL/PSK/HTL were known as important factors for determining high open-circuit voltage (Voc) and FF. In this study, the impact of two kinds of interfaces, i.e., ETL/PSK and PSK/HTL, were examined. When the interface defect density at both interfaces decrease to 10² cm⁻², the interface recombination became low, and Voc and FF increased. In contrast, when the trap defect energy at interfaces increased near to the bandgap of the PSK, the collection of photo-generated carriers was enhanced due to the formation of better offset for electron current flow. Thus, the optimum trap defect energy was 1.4 eV for both interfaces. Also, the capture cross-section for both electron and hole (σ_n and σ_p) was 10^-20 cm². These results will be useful for new material choice and optimization of ETLs and HTLs.

在本文中，通过仿真模型验证了实验的JV和外部量子效率（EQE），以显示钙钛矿（PSK）太阳能电池（PSC）效率的提高。使用太阳能电池电容模拟器（SCAPS）检查了电子传输层（ETL）/ PSK和PSK /空穴传输层（HTL）的界面特性的影响。ETL / PSK / HTL之间的接口是确定高开路电压（Voc）和FF的重要因素。在这项研究中，检查了两种接口（即ETL / PSK和PSK / HTL）的影响。当两个界面处的界面缺陷密度降低到10 ²  cm ^-2时，界面重组变低，并且Voc和FF增加。相反，当界面处的陷阱缺陷能增加到PSK的带隙附近时，由于形成了更好的电子电流偏移，光生载流子的收集得以增强。因此，两个界面的最佳陷阱缺陷能量均为1.4 eV。另外，俘获截面为电子和空穴（σ _Ñ和σ _p）为10 ^-20 厘米²。这些结果对于新材料的选择以及ETL和HTL的优化将很有用。