In recent years, the data traffic has grown exponentially and the forecasts indicate a huge market that could be addressed by optoelectronics. However, the processing capacity, space, and energy consumption of the available technology is a serious bottleneck for the exploitation of these markets. Graphene material is a new candidate using in optoelectronics’ devices such as photodetector. The responsivity of Graphene photodetectors depends critically on the elevated temperature of the electronic subsystem upon photoexcitation. We performed in this study a multi layer Graphene/InGaAs /InAlAs/InAs Photodetector PIN simulation with Atlas under Silvaco tcad Tools using Graphene and high electronmobility III-V materials. Our devices exhibit 100 GHz bandwidth with 40 ps transient reponse, 5.8 mA of photocurrent, high responsivity with value of (2.7 × 10^-7 A/w) and a suitable efficiency η of 95% with reasonable rejection ration of I_ilumination/I_dark of 2 order of magnitude.

近年来，数据流量呈指数增长，并且预测表明光电子可以解决这个巨大的市场。但是，可用技术的处理能力，空间和能耗是开发这些市场的严重瓶颈。石墨烯材料是在光电设备（例如光电探测器）中使用的一种新的候选材料。石墨烯光电探测器的响应度主要取决于光激发时电子子系统的高温。在这项研究中，我们在Silvaco tcad工具下使用Atlas在石墨烯和高电子迁移率III-V材料下使用Atlas进行了多层石墨烯/ InGaAs / InAlAs / InAs光电探测器PIN模拟。我们的设备具有100 GHz带宽和40 ps的瞬态响应，5.8 mA的光电流，高响应性，值为（2.7×10^-7 A / w）和95％的合适效率η以及2数量级的I_照明/ I _dark的合理抑制比。