Abstract In the present work, catalyst free GaN nanowires were grown on Si (111) substrates by plasma assisted molecular beam epitaxy followed by chemical vapour deposited few layers MoS2. The morphology of the GaN nanowires and MoS2/GaN were studied using scanning electron microscopy. The vibrational properties of MoS2/GaN nanowires/Si (111) substrates were analysed using Raman spectroscopy. The difference of 24.8 cm−1 between E2g and A1g Raman peaks confirmed few layers of MoS2. High Resolution X-ray diffraction results in accordance with Raman results also indicated the growth of few layers of MoS2 on GaN nanowires grown on Si (111) substrates. As a result MoS2/GaN nanowires heterojunction with their exceptional structural and vibrational properties as studied in the present work can have great potential for future optoelectronic devices.

中文翻译：

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在 Si (111) 衬底上无催化剂 PAMBE 生长的 GaN 纳米线上 CVD 生长的几层 MoS2 的结构和振动特性

摘要 在目前的工作中，无催化剂的 GaN 纳米线通过等离子体辅助分子束外延在 Si (111) 衬底上生长，然后化学气相沉积几层 MoS2。使用扫描电子显微镜研究了 GaN 纳米线和 MoS2/GaN 的形态。使用拉曼光谱分析了 MoS2/GaN 纳米线/Si (111) 衬底的振动特性。E2g 和 A1g 拉曼峰之间 24.8 cm-1 的差异证实了很少的 MoS2 层。与拉曼结果一致的高分辨率 X 射线衍射结果也表明在 Si (111) 衬底上生长的 GaN 纳米线上生长了几层 MoS2。因此，MoS2/GaN 纳米线异质结及其在当前工作中研究的特殊结构和振动特性对于未来的光电器件具有巨大的潜力。