Abstract As an environment-friendly technique, the water-based solution process has attracted numerous attention. Due to the ability to fabricate oxide semiconductor films for transistors with acceptable electric properties at relatively low temperatures (~200 °C lower compared with organic solvent), it has great potential in future display technology, and various correlation technologies are keeping emerging. Here, an efficient and facile water route thermal-assisted brush printing is demonstrated, which can be applied to fabricate the semiconductor layer of indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) by the solution process. The synergistic effects of thermal-annealing and brush printing on the film formation process were comprehensively investigated, implying the synergistic effects induce the acceleration of the evaporation of the precursor solvent and promotes the lower surface roughness of as-prepared thin-film, resulting in improved transistor properties. Mechanically, the proposed film-forming model of thermal-assisted brush printing is also elaborated, which is expected to be a general guideline for the solution processing of metal-oxide semiconductor thin-films.

中文翻译：

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水基 In-Ga-Zn 氧化物晶体管的热辅助刷印

摘要 水基溶液法作为一种环境友好的技术，引起了广泛的关注。由于能够在相对较低的温度（比有机溶剂低约 200°C）下制造具有可接受电性能的晶体管氧化物半导体薄膜，在未来的显示技术中具有巨大潜力，并且各种相关技术不断涌现。在这里，展示了一种高效、简便的水路热辅助刷印刷，可用于通过溶液工艺制造铟镓锌氧化物 (IGZO) 薄膜晶体管 (TFT) 的半导体层。综合研究了热退火和刷印对成膜过程的协同作用，这意味着协同效应会加速前体溶剂的蒸发，并促进所制备薄膜的较低表面粗糙度，从而改善晶体管性能。在机械方面，还阐述了所提出的热辅助刷印成膜模型，有望成为金属氧化物半导体薄膜溶液加工的一般指南。