In this paper, the implementation and electro-migration (EM) study in GaAs pHEMT stacked distributed power amplifier (SDPA) is presented. A 0.2−7 GHz PA is designed using a 0.15μm GaAs pHEMT process, which employs 4-distributed 2-stacked-field effect transistors (FETs) to obtain about 1-watt output power with corresponding power added efficiency (PAE) of 26–32% within a very small chip size of 2.9mm². Using the finite element analysis (FEA), the EM prediction for an SDPA is achieved effectively to find the weakest spot for the stacked distributed PA. This can provide valuable guidance for circuit design and analysis.

中文翻译：

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堆叠式分布式功率放大器的设计与电迁移研究

本文介绍了 GaAs pHEMT 堆叠分布式功率放大器 (SDPA) 的实现和电迁移 (EM) 研究。一个 0.2-7 GHz PA 设计使用 0.15μm GaAs pHEMT 工艺，采用 4 个分布式 2 个堆叠场效应晶体管 (FET) 在 2.9 的非常小的芯片尺寸内获得约 1 瓦的输出功率，相应的功率附加效率 (PAE) 为 26-32%毫米²。使用有限元分析 (FEA)，有效地实现了 SDPA 的 EM 预测，以找到堆叠分布式 PA 的最薄弱点。这可以为电路设计和分析提供有价值的指导。