A two-path low-noise amplifier (LNA) is designed with TSMC 0.18μm standard RF CMOS process for 6–16GHz frequency band applications. The principle of a conventional resistive shunt feedback LNA is analyzed to demonstrate the trade-off between the noise figure (NF) and the input matching. To alleviate the mentioned issue for wideband application, this structure with noise canceling technique and linearity improvement are applied to a two-path structure. Flat and high gain is supplied by the primary path; while the input and output impedance matching are provided by the secondary path. The −3dB bandwidth can be increased to a higher frequency by inductive peaking, which is used at the first stage of the two paths. Besides, by biasing the transistors at the threshold voltage, low power dissipation is achieved. The −3dB gain bandwidth of the proposed LNA is 10GHz, while the maximum power gain of 13.1dB is attained. With this structure, minimum NF of 4.6dB and noise flatness of 1dB in the whole bandwidth can be achieved. The input impedance is matched, and S11 is lower than −10 dB. With the proposed linearized LNA, the average IIP3 of+0.5dBm is gained, while it occupies 1051.7μm×749.7μm die area.

中文翻译：

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用于 6–16 GHz 应用的低噪声双通道放大器设计

采用 TSMC 0.18 设计的两路低噪声放大器 (LNA)μm 标准射频 CMOS 工艺，适用于 6–16GHz频段应用。分析了传统电阻并联反馈 LNA 的原理，以证明噪声系数 (NF) 和输入匹配之间的权衡。为了缓解宽带应用的上述问题，这种具有噪声消除技术和线性改进的结构被应用于双路径结构。平坦且高增益由主路径提供；而输入和输出阻抗匹配由辅助路径提供。这-3通过在两条路径的第一阶段使用的感应峰化，可以将 dB 带宽增加到更高的频率。此外，通过将晶体管偏置在阈值电压，可以实现低功耗。这-3建议 LNA 的 dB 增益带宽为 10GHz，而最大功率增益为 13.1达到分贝。采用这种结构，最小 NF 为 4.6dB 和 1 的噪声平坦度在整个带宽内可以达到dB。输入阻抗匹配，并且 S11低于-10分贝。使用建议的线性化 LNA，平均 IIP3 的+0.5dBm 增加，同时占用 1051.7μ米×749.7μm 模具面积。