Chemical vapor deposition of clean and pure MoS2 crystals by the inhibition of MoO3−x intermediates,CrystEngComm

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Chemical vapor deposition of clean and pure MoS2 crystals by the inhibition of MoO3−x intermediates
CrystEngComm ( IF 2.6 ) Pub Date : 2020-11-05 , DOI: 10.1039/d0ce01354d
Ran Guan _{1,

2,

3,

4} , Junxi Duan _{4,

5,

6,

7} , Aiheng Yuan _{1,

2,

3,

4} , Zhuofan Wang _{1,

2,

3,

4} , Shuai Yang _{1,

2,

3,

4} , Luoqiao Han _{1,

2,

3,

4} , Bo Zhang _{1,

2,

3,

4} , Dejun Li _{1,

2,

3,

4} , Birong Luo _{1,

2,

3,

4}

Affiliation

Molybdenum disulfide (MoS₂) synthesized via chemical vapor deposition (CVD) is commonly accompanied by some intermediate products in the form of MoO_3−x, resulting in MoS₂–MoO_3−x hybrids with diverse structures. In this study, we show that through the rational design of heating evaporation rate of the precursors of sulfur and MoO₃ separately in a CVD system with double temperature zones, the intermediate product of MoO_3−x involved in the CVD growth of MOS₂ (generally in the form of quadrilateral MoO₂/MoS₂ composites and/or stacks of quadrilateral MoO₂/triangular MoS₂) can be inhibited largely. On this basis, the appropriate sulfur sublimation versus the evaporated MoO₃ powder is revealed to be the key factor for the inhibition of intermediates, obtaining high-quality MoS₂ crystals with as high as >90% cleanness/purity. This study will assist our understanding of the fundamental CVD growth mechanisms of transition metal dichalcogenides (TMDCs) and provides a facile direction for the controlled synthesis of high-quality MoS₂ and other TMDCs with or without intermediate hybrids for applications.

中文翻译：

通过抑制MoO3-x中间体化学气相沉积干净纯净的MoS2晶体

通过化学气相沉积（CVD ）合成的二硫化钼（MoS ₂）通常伴随一些以MoO _3-_x形式存在的中间产物，从而形成具有不同结构的MoS ₂ -MoO _3-_x杂化物。在这项研究中，我们表明，通过合理设计双温度区CVD系统中硫和MoO ₃的前体的加热蒸发速率分别，MoO _3-_x的中间产物参与了MOS ₂的CVD生长（通常为四边形MoO ₂ / MoS _2形式可以极大地抑制四边形MoO ₂ /三角形MoS _2的复合材料和/或堆叠。在此基础上，相对于蒸发的MoO ₃粉末，适当的硫升华被证明是抑制中间体，获得纯度/纯度高达> 90％的高质量MoS ₂晶体的关键因素。这项研究将帮助我们理解过渡金属二卤化物（TMDC）的基本CVD生长机理，并为受控合成高质量MoS ₂和其他带有或不带有中间杂化物的TMDC的应用提供方便的方向。

更新日期：2020-11-22

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