Abstract The Al3+–Sn4+ substitution into p-type Al- and N- co-doped SnO2 films enhances the N solubility in the SnO2 host lattice. The N solubility in the SnO2 host lattice increased with an increase in N2 content in the mixed sputtering gas, and the optimum N2 content was found to be 60 %, which corresponds to high film crystal quality and the lowest resistivity. The Al3+–Sn4+ and N3−–O2− substitution was verified using X-ray photoelectron spectroscopy (XPS), ultraviolet–visible spectroscopy, energy‐dispersive X‐ray (EDX), and X-ray diffraction (XRD) patterns. The SnO2 tetragonal rutile to cubic phase transformation indicated high N solubility in the SnO2 host lattice, while the Al3+–Sn4+ replacement was also verified by the crystal evolution of a (101) lattice reflection and the occurrence of the charge compensation effect. The best values achieved for resistivity, hole concentration, and hole mobility of the film were 6.4 × 10−3 Ω cm, 6.4 × 1019 cm−3, and 15.2 cm2 V−1 s−1, respectively. The current-voltage characteristics of films/n-Si heterojunctions under the illumination condition showed the p-type conductive properties of the films, and photocurrent response of the optimum film/n-Si heterojunction diode under the illumination condition of monochromatic wavelength light-emitting diodes (LEDs) exhibited a sufficient reproducible cycle and verified the N3−acceptor and VO donor levels in the bandgap.

中文翻译：

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在溅射气体中研究具有不同 N2 含量的 p 型 Al 和 N 共掺杂 SnO2 薄膜的主晶格中的 N 溶解度

摘要 Al3+–Sn4+ 取代到p 型Al-和N- 共掺杂SnO2 薄膜中提高了SnO2 主晶格中的N 溶解度。SnO2 主晶格中的 N 溶解度随着混合溅射气体中 N2 含量的增加而增加，发现最佳 N2 含量为 60%，这对应于高薄膜晶体质量和最低电阻率。使用 X 射线光电子能谱 (XPS)、紫外-可见光谱、能量色散 X 射线 (EDX) 和 X 射线衍射 (XRD) 模式验证了 Al3+–Sn4+ 和 N3-–O2- 取代。SnO2 四方金红石到立方相转变表明在 SnO2 主晶格中 N 的溶解度很高，而 Al3+–Sn4+ 置换也通过（101）晶格反射的晶体演化和电荷补偿效应的发生得到证实。薄膜电阻率、空穴浓度和空穴迁移率的最佳值分别为 6.4 × 10-3 Ω cm、6.4 × 1019 cm-3 和 15.2 cm2 V-1 s-1。光照条件下薄膜/n-Si异质结的电流-电压特性表现出薄膜的p型导电特性，最佳薄膜/n-Si异质结二极管在单色波长发光条件下的光电流响应二极管 (LED) 表现出足够的可重复循环，并验证了带隙中的 N3-受体和 VO 供体水平。