ABSTRACT In this study, the effects of a metal capping layer on indium-gallium oxide (IGO) films and associated TFTs were demonstrated. By introducing a Ta metal capping layer and a subsequent annealing process, IGO films are crystallized at the relatively low temperature of 250 °C which is suitable for low-cost flexible substrate such as PI. The Ta-induced IGO TFT shows significantly improved field-effect mobility from 29.3 (device without Ta layer) to 76.9 cm2/Vs. This improvement is due to the reduced number of defects which is consumed preferentially during the crystallization process by injected electron from the metal capping layer. Molecular dynamics calculations were performed in order to obtain theoretical insight into the inner-diffusions of atoms. Oxygen atoms near the interface region break their bonds with the metal cations of IGO and are attracted to Ta capping layer due to difference in the Gibbs free energy of formation, which should constitute the reason for its superior performance.

中文翻译：

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通过金属催化层诱导的氧扩散增强铟镓氧化物的迁移率

摘要 在这项研究中，证明了金属覆盖层对氧化铟镓 (IGO) 薄膜和相关 TFT 的影响。通过引入 Ta 金属覆盖层和随后的退火工艺，IGO 薄膜在 250 °C 的相对较低的温度下结晶，适用于低成本的柔性基板，如 PI。Ta 诱导的 IGO TFT 的场效应迁移率从 29.3（没有 Ta 层的器件）显着提高到 76.9 cm2/Vs。这种改进是由于在结晶过程中由金属覆盖层注入的电子优先消耗的缺陷数量减少。进行分子动力学计算是为了获得对原子内部扩散的理论洞察。