Rapid interwell carrier transport is a key process for a uniform carrier distribution and reduced Auger recombination in multiple quantum well (MQW) light emitting devices. In this work, the interwell transport has been studied by time-resolved photoluminescence in In_0.12Ga_0.88N MQWs with In _x Ga_1−x N (x=00.06) and Al_0.065Ga_0.935N barriers. Only for the InGaN barriers the transport is efficient. However, introduction of In into the barriers is accompanied by an increase of the nonradiative recombination at QW interfaces. Still, even with the increased Shockley–Read–Hall recombination, structures with InGaN barriers might be advantageous for high power devices because of the reduced Auger recombination.

快速阱间载流子传输是在多个量子阱（MQW）发光器件中实现均匀载流子分布和减少俄歇重组的关键过程。在这项工作中，通过在In _x Ga _{1- x} N（x = 00.06）和Al _0.065 Ga _0.935的In _0.12 Ga _0.88 N MQWs中通过时间分辨的光致发光研究了井间传输 N个障碍。仅对于InGaN势垒，传输才有效。然而，将In引入到势垒中伴随着QW界面处非辐射复合的增加。尽管如此，即使增加了Shockley-Read-Hall重组，由于减少了俄歇重组，因此具有InGaN势垒的结构对于高功率器件可能仍然是有利的。