A special total-ionizing-dose-induced short channel effect in thin-film partially depleted silicon-on-insulator (PDSOI) technology is found. Short devices suffer more significant total-ionizing-dose-induced threshold voltage shift of the front-gate main transistor. The devices under pass-gate (PG) bias show worse threshold voltage shift of the front-gate main transistor than the devices under ON bias, which reveal that the trapped charges in the buried oxide layer are more responsible for these phenomena. Through the simulation of the electric field under PG bias by TCAD, we found that devices with different lengths can be uniformly divided into four regions. Then we combined the partially full depletion model with charge-sharing model and made a qualitative analysis of this effect. On this basis, we proposed a quantitative analysis model. Through this model, we can calculate the threshold voltage shift of the front-gate main transistor through the threshold voltage shift of back-gate main transistor.

中文翻译：

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薄膜 PDSOI 技术中一种特殊的总电离剂量诱导的短沟道效应：现象、分析和模型

在薄膜部分耗尽绝缘体上硅 (PDSOI) 技术中发现了一种特殊的总电离剂量诱导的短沟道效应。短器件遭受更显着的前栅极主晶体管的总电离剂量引起的阈值电压偏移。导通栅 (PG) 偏置下的器件的前栅主晶体管的阈值电压偏移比导通偏置下的器件更差，这表明掩埋氧化物层中的俘获电荷对这些现象负有更大的责任。通过 TCAD 对 PG 偏压下的电场进行模拟，我们发现不同长度的器件可以均匀地划分为四个区域。然后我们将部分完全耗尽模型与电荷共享模型相结合，并对该效应进行了定性分析。在此基础上，我们提出了定量分析模型。