Problems caused by neutron-induced soft errors in electrical devices are becoming increasingly common in various applications. The neutron-energy-dependent soft-error rate is indispensable for evaluating the frequency of such errors in different neutron fields. We have observed the energy-dependent neutron-induced error rates continuously over the energy range of 1-800 MeV at Los Alamos Neutron Science Center (LANSCE). This was made possible by using extremely fast circuits built into field-programmable gate arrays (FPGAs) for time-of-flight measurement. Current experimental results revealed the overall trend of the error rate, which gradually increases up to 20 MeV. Interestingly, the rate depended on the type of device, and the errors occurred even below the threshold energy of the nuclear cross section of silicon, 2.75 MeV.

中文翻译：

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LANSCE 采用飞行时间技术对 1'800 MeV 中子进行能量分辨软错误率测量


电气设备中由中子引起的软错误引起的问题在各种应用中变得越来越普遍。与中子能量相关的软错误率对于评估不同中子场中此类错误的频率是必不可少的。我们在洛斯阿拉莫斯中子科学中心 (LANSCE) 连续观察到能量相关的中子诱发误差率在 1-800 MeV 的能量范围内。这是通过使用现场可编程门阵列 (FPGA) 中内置的极快电路进行飞行时间测量而实现的。目前的实验结果揭示了错误率的总体趋势，逐渐增加至20 MeV。有趣的是，该速率取决于器件的类型，甚至在低于硅核截面的阈值能量 2.75 MeV 时也会发生错误。