In this article, we investigate neutron-induced failures of the Galaxy S7 Edge smartphone (released 2016). Anomalous changes in the neutron-irradiated Galaxy smartphone are described in detail (e.g., device current increments up to 270 mA or overheating in the proximity of the WiFi module). The discussion of system failures includes not only visual observations, but also changes in the current and device temperature of the target smartphone. The system behavior associated with failure modes is also discussed in an effort to relate single-event effects to system malfunctions. Additionally, the test results are compared to similar studies of five products (released 2007–2015). In comparison to the failure rates among those products, the system-level failure-in-time (FIT) did not show a downward trend, although the FIT per megabit (FIT/Mbit) values of static random access memory (SRAM) declined as the technology node shrank.

中文翻译：

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Galaxy S7 Edge智能手机中子辐射失效分析

在本文中，我们调查了 Galaxy S7 Edge 智能手机（2016 年发布）的中子引起的故障。详细描述了中子辐照的 Galaxy 智能手机的异常变化（例如，设备电流增量高达 270 mA 或 WiFi 模块附近的过热）。系统故障的讨论不仅包括视觉观察，还包括目标智能手机的电流和设备温度的变化。还讨论了与故障模式相关的系统行为，以便将单事件影响与系统故障联系起来。此外，将测试结果与五种产品（2007-2015 年发布）的类似研究进行了比较。与这些产品的故障率相比，系统级故障时间（FIT）并没有出现下降的趋势，