The electrical and spectrometric characteristics of the Cr/cadmium telluride (CdTe)/Pt structure with a metal–semiconductor type rectifying contact, used in X/ $\gamma $ -ray detectors, are investigated. For the detectors fabrication, chlorine-doped CdTe crystals with a resistivity of (3–6) $\times 10^{{9}}\,\,\Omega $ cm at 293 K were used. ¹³⁷Cs spectra and their modification by applied voltage change were obtained. The reverse bias voltage corresponding to the best energy resolution of the Cr/CdTe/Pt structure is experimentally determined. The concentration of impurities N in the crystal, which determines the thickness of the space-charge region, is estimated. An energy resolution deterioration of the Cr/CdTe/Pt structure with increasing voltage is explained due to the Gunn effect.

中文翻译：

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电场强度对 Cr/CdTe/Pt 探测器能量分辨率的影响

具有金属-半导体型整流触点的 Cr/碲化镉 (CdTe)/Pt 结构的电气和光谱特性，用于 X/ $\伽马$ 射线探测器进行了研究。对于探测器制造，具有 (3-6) 电阻率的氯掺杂 CdTe 晶体 $\times 10^{{9}}\,\,\Omega $ 厘米在 293 K 被使用。^{获得了 137 个}Cs 光谱及其通过施加电压变化的修改。对应于 Cr/CdTe/Pt 结构的最佳能量分辨率的反向偏置电压是通过实验确定的。估计晶体中杂质 N 的浓度，这决定了空间电荷区的厚度。由于冈恩效应，Cr/CdTe/Pt 结构的能量分辨率随着电压的增加而降低。