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Effect of the electric field strength on the energy resolution of Cr/CdTe/Pt detectors
IEEE Transactions on Nuclear Science ( IF 1.9 ) Pub Date : 2020-11-01 , DOI: 10.1109/tns.2020.3026259
V. Sklyarchuk , Z. Zakharuk , S. Solodin , A. Rarenko , O. Sklyarchuk , P. Fochuk , A. Bolotnikov , R.B. James

The electrical and spectrometric characteristics of the Cr/cadmium telluride (CdTe)/Pt structure with a metal–semiconductor type rectifying contact, used in X/ $\gamma $ -ray detectors, are investigated. For the detectors fabrication, chlorine-doped CdTe crystals with a resistivity of (3–6) $\times 10^{{9}}\,\,\Omega $ cm at 293 K were used. 137Cs spectra and their modification by applied voltage change were obtained. The reverse bias voltage corresponding to the best energy resolution of the Cr/CdTe/Pt structure is experimentally determined. The concentration of impurities N in the crystal, which determines the thickness of the space-charge region, is estimated. An energy resolution deterioration of the Cr/CdTe/Pt structure with increasing voltage is explained due to the Gunn effect.

中文翻译:

电场强度对 Cr/CdTe/Pt 探测器能量分辨率的影响

具有金属-半导体型整流触点的 Cr/碲化镉 (CdTe)/Pt 结构的电气和光谱特性,用于 X/ $\伽马$ 射线探测器进行了研究。对于探测器制造,具有 (3-6) 电阻率的氯掺杂 CdTe 晶体 $\times 10^{{9}}\,\,\Omega $ 厘米在 293 K 被使用。获得了 137 个Cs 光谱及其通过施加电压变化的修改。对应于 Cr/CdTe/Pt 结构的最佳能量分辨率的反向偏置电压是通过实验确定的。估计晶体中杂质 N 的浓度,这决定了空间电荷区的厚度。由于冈恩效应,Cr/CdTe/Pt 结构的能量分辨率随着电压的增加而降低。
更新日期:2020-11-01
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